高功率多结905nm垂直腔面发射激光器  

High-Power Multi-Junction 905 nm Vertical-Cavity Surface-Emitting Lasers

作　　者：赵飞云 任翱博 巫江 ZHAO Feiyun;REN Aobo;WU Jiang(Institute of Fundamental and Frontier Sciences,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 611731,China)

机构地区：[1]电子科技大学,基础与前沿研究院,成都610054 [2]电子科技大学,电子薄膜与集成器件国家重点实验室,成都611731

出　　处：《人工晶体学报》2023年第5期818-824,共7页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2021YFA1401100);四川省青年科技创新研究团队(20CXTD0090);国家自然科学基金青年项目(52202165);四川省自然科学基金(2022NSFSC0918)。

摘　　要：本文针对激光雷达等中、远距离传感应用,设计并制备了3结905 nm垂直腔面发射激光器(VCSEL)。通过PICS3D软件对多结VCSEL相邻有源区间距和P型分布布拉格反射镜(DBR)对数进行仿真计算,设计了具有2λ的相邻有源区间距和14对P型DBR的3结VCSEL。在此基础上,外延生长和制备了100单元3结905 nm VCSEL阵列,单元氧化孔径为15μm。在窄脉冲条件下(脉冲宽度100 ns,占空比0.05%),该阵列的最大峰值功率达到24.7 W,峰值功率密度为182 W/mm^(2)。Three-junction 905 nm vertical-cavity surface-emitting laser(VCSEL)was designed and fabricated for medium and long range sensing applications such as lidar.Through simulations using PICS3D software,the optimal adjacent active region spacing and number of P-type distributed Bragg reflectors(DBR)in the multi-junction VCSEL were determined,resulting in a design featuring a 2λadjacent active region spacing and 14 pairs of P-type DBR.Using this design,a 100-element threejunction VCSEL array was grown and fabricated with an oxide aperture of 15μm.The resulting array achieves a maximum peak power of 24.7 W and a peak power density of 182 W/mm^(2) under narrow pulse conditions(with a pulse width of 100 ns and a duty cycle of 0.05%).

关 键 词：垂直腔面发射激光器 多结级联 金属有机物化学气相沉积 隧道结 驻波场 窄脉冲测试 

分 类 号：TN248.4[电子电信—物理电子学]