Ka波段40W功率放大器MMIC的设计和实现  

Design and Implementation of Ka-Band 40 W Power Amplifier MMIC

作　　者：王彪 王生国[1,2] 刘帅[1] 李静强[1] 付兴中[1] 许春良[1] Wang Biao;Wang Shengguo;Liu Shuai;Li Jingqiang;Fu Xingzhong;Xu Chunliang(The 13th Research Institute,CETC,Shijiazhuang 050051,China;Science and Technology on ASIC Laboratory,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2023年第5期403-407,共5页Semiconductor Technology

摘　　要：采用0.15μm栅长GaN高电子迁移率晶体管(HEMT)工艺,研制了一款Ka波段大功率、高效率功率放大器单片微波集成电路(MMIC)。电路采用三级放大结构,在输入、输出端采用Lange耦合器进行功率分配和合成,输入匹配网络加入RC稳定结构以提升电路稳定性,末级器件采用改进型电抗式Bus-bar总线合成匹配网络,在保证各路平衡性的同时,调整器件电压和电流波形,提高电路的输出功率和功率附加效率。测试结果表明,在34~36 GHz频带内,放大器MMIC的饱和输出功率达到40 W,功率增益达到18 dB,功率附加效率达到30%。该功率放大器可有效改善毫米波发射系统的信号传输距离和作用精度。By using O.15μm gate length GaN high electron mobility transistor(HEMT)technology,a Ka-band high-power and high-efficiency power amplifier monolithic microwave integrated circuit(MMIC)was developed.The circuit adopted a three-stage amplification structure.The input and output ports used Lange couplers for power dividing and combining.The RC stable structure was added to the input matching network to improve the stability of the circuit.The last-stage device adopted an improved reactive Bus-bar combining matching network,which could adjust the voltage and current waveforms of the device to improve the output power and power added efficiency(PAE)of the circuit,while ensuring the balance of each path.The test results show that the amplifier MMIC achieves a saturated output power of 40 W,a power gain of 18 dB and a PAE of 30%within the 34-36 GHz frequency band.The power amplifier can effectively improve the signal transmission distance and operating accuracy of the millimeter wave transmission system.

关 键 词：功率放大器(PA) KA波段 GAN 单片微波集成电路(MMIC) 大功率 高效率 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN722.75