共振隧穿二极管THz辐射源研究进展  

Research progress of Resonant Tunneling Diode THz radiation source

作　　者：彭雨欣 孟雄 孟得运 PENG Yuxin;MENG Xiong;MENG Deyun(School of Physics and Electronic Engineering,Jiangsu University,Zhenjiang Jiangsu 212000,China)

机构地区：[1]江苏大学物理与电子工程学院,江苏镇江212000

出　　处：《太赫兹科学与电子信息学报》2023年第5期579-585,600,共8页Journal of Terahertz Science and Electronic Information Technology

摘　　要：太赫兹技术被称为“改变未来世界十大技术之一”,对基础科学研究、国民经济发展和国防建设具有重要意义,尤其在未来6G通信方面举足轻重。太赫兹波源是整个太赫兹技术研究的基础,也是太赫兹应用系统的核心部件。近年来,共振隧穿二极管(RTD)型太赫兹波源因体积小,质量轻,易于集成,室温工作,功耗低等特点受到广泛关注,为太赫兹波推广应用开辟了新的途径。通过文献分析,本文从器件材料技术、主要工艺及器件性能等方面对InP基与GaN基RTD太赫兹振荡器的发展进行评述,并探讨了InP基与GaN基RTD太赫兹振荡器件的研究方向。Terahertz technology is known as“one of the top ten technologies to change the future world”,which is of great significance to basic scientific research,national economic development and national defense construction,especially in the future 6G communication.Terahertz source is essential to terahertz technology research and the core component of terahertz application system.In recent years,Resonant Tunneling Diode(RTD)terahertz source has attracted extensive attention because of its small volume,light weight,easy integration,room temperature operation and low power consumption,which opens up a new way for the popularization and application of terahertz.Through literature analysis,this paper reviews the development of RTD terahertz oscillators based on InP and GaN from the aspects of device material technology,main processes and device properties.At present,how to prepare high-performance,mature and stable InP and GaN based RTD terahertz oscillators has always been a research direction.

关 键 词：共振隧穿二级管 太赫兹波源 磷化铟 氮化镓 

分 类 号：TN15[电子电信—物理电子学]