面向GAA器件的自对准侧墙转移技术  

Self-Aligned Spacer Image Transfer Technology for the Gate-All-Around Devices

作　　者：韩燕楚 张青竹[2] 吴次南 李俊杰[2] 张兆浩 田佳佳 殷华湘[2] Han Yanchu;Zhang Qingzhu;Wu Cinan;Li Junjie;Zhang Zhaohao;Tian Jiajia;Yin Huaxiang(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Integrated Circuit Advanced Process R&D Center,Institute of Microelectronic,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025 [2]中国科学院微电子研究所集成电路先导工艺研发中心,北京100029 [3]中国科学院大学,北京100049

出　　处：《微纳电子技术》2023年第5期793-802,共10页Micronanoelectronic Technology

基　　金：中国科学院战略性先导科技专项资助(E1XDC2X002);北京市科技新星计划(Z201100006820084)。

摘　　要：纳米尺度的图形化以及先进刻蚀技术是先进围栅(gate-all-around, GAA)器件面临的重要挑战之一。通过自对准侧墙转移技术设计和实现了纳米尺度的鳍和栅。同时采用剪裁氮化硅硬掩膜的方案设计实现了鳍剪裁,高效率地形成均匀的鳍阵列(宽度49 nm,高度400 nm,长度402 nm)。另外,通过自对准侧墙转移技术形成了宽度为48 nm的栅,栅顶部还有较厚的SiO_(2)/SiN_(x)/SiO_(2)(ONO)掩膜,内部非晶硅“伪栅”被ONO硬掩膜和侧壁覆盖良好。将该两项技术应用在环栅堆叠硅纳米片金属氧化物半导体场效应晶体管(MOSFET)中,获得栅长(L_(G))为60 nm的器件,在0.7 V栅压时器件的驱动电流高达676μA/μm,比未用该技术的60 nm栅长的器件驱动性能提升了4.02倍,开关比(开态电流(I_(on))/关态电流(I_(off)))为5.7×105。该工作对未来纳米尺寸图形的制备以及先进电子器件研制具有重要的参考意义。Nanoscale patterning and advanced etching technology are one of the important challenges for advanced gate-all-around(GAA)devices.Nanoscale fin and gate were designed and realized by a self-aligned spacer image transfer(SIT)technology.Meanwhile,the scheme of cutting silicon nitride hard mask was designed to realize fin cutting,and uniform fin array(49 nm in width,400 nm in height,402 nm in length)was formed efficiently.In addition,the gate with a width of 48 nm was formed by self-aligned SIT technology.There is also a thick Si O_(2)/Si N_(x)/Si O_(2)(ONO)mask on the top of the gate and internal amorphous silicon is well covered by the ONO hard mask and spacers.The two technologies were applied to the stacked GAA silicon nanosheet metal oxide semiconductor field effect transistor(MOSFET)devices,and the device with a gate length(L_(G))of 60 nm was obtained.The driving current is up to 676μA/μm at a gate voltage of 0.7 V and the driving performance is 4.02 times higher than that the device of 60 nm gate length without the technology,the switching ratio(on-state current(I_(on))/off-state current(I_(off)))is 5.7×105.The work has important reference for the fabrication of nanoscale patterns and the development of advanced electronic devices in the future.

关 键 词：自对准侧墙转移 围栅(GAA)器件 鳍阵列 鳍剪裁 干法刻蚀 

分 类 号：TN305.7[电子电信—物理电子学]