355 nm紫外激光在硅晶圆上标识二维码的工艺研究  

Research on the Process of Marking DM Code on Silicon Wafer by 355nm UV Laser

作　　者：陈媛[1,2] 张玲玲 李国旗[1,2] 杜远超 舒天娇[1,2] 吴鸯 Chen Yuan;Zhang Lingling;Li Guoqi;Du Yuanchao;Shu Tianjiao;Wu Yang(Shanghai Institute of Laser Technology,Shanghai 200233,China;Shanghai DPM Traceability Engineering Research Center,Shanghai 200233,China)

机构地区：[1]上海市激光技术研究所,上海200233 [2]上海激光直接物标溯源工程技术研究中心,上海200233

出　　处：《应用激光》2023年第5期70-76,共7页Applied Laser

基　　金：上海市科委资助项目(19511130500)。

摘　　要：利用紫外纳秒标识系统对硅晶圆表面进行二维码直接标识试验研究。采用控制变量法,分别研究不同的脉冲占空比、重复频率、光斑重叠率对标识材料的热损伤、表面形貌以及二维码识读效果的影响规律。研究结果表明,脉冲占空比和重复频率对标识区域的环宽和热损伤影响效果明显,二维码的读取率和识读时间同时受占空比、重复频率、光斑重叠率影响。单脉冲能量在10.7~20μJ范围内可以标识出符合SEMI标准的均匀、细腻、稳定、高识读率的无尘标识。The UV nanosecond marking system is used to experimentally study the direct marking of DM code on silicon wafer surface.The control variable method is used to study the influence of different pulse duty cycle,repetition frequency,and spot overlap ratios on the thermal damage,surface topography,and DM code reading effect of the marking materials.The results show that the pulse duty cycle and repetition frequency have obvious effects on the ring width and heat affected zone of the marking area,and the reading rate and reading time of DM code are affected by duty cycle,repetition frequency,and spot overlap rate at the same time.The single-pulse energy in the range of 10.7μJ~20μJ can mark uniform,delicate,stable,and highreadability dust-free marks that meet the SEMI standard.

关 键 词：激光标识 硅晶圆 热损伤 识读率 

分 类 号：TN249[电子电信—物理电子学]