28 nm工艺触发器中能质子单粒子效应研究  

Study on Single Event Effect of Intermediate Energy Proton in 28 nm Process Trigger

作　　者：高熠 陈瑶[1] 吕伟 赵铭彤 王茂成 GAO Yi;CHEN Yao;LYU Wei;ZHAO Mingtong;WANG Maocheng(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China;Northwest Institute of Nuclear Technology,Xi’an 710024,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035 [2]西北核技术研究所,西安710024

出　　处：《电子与封装》2023年第6期72-75,共4页Electronics & Packaging

摘　　要：基于采取不同加固措施的28 nm体硅CMOS工艺的触发器链,开展了中能质子对纳米级电路单粒子翻转(SEU)效应影响的研究。选取20 MeV、40 MeV、60 MeV以及100 MeV质子对电路进行辐照,得到相关的SEU截面,结果显示,随着入射质子能量的增加,SEU截面增加,并在60 MeV质子能量点附近达到饱和,翻转截面接近8×10^(-14)cm^(-2)/bit。对采取了不同加固方法的触发器链的试验数据进行分析对比,可以看到,单独的版图加固措施只能稍微降低翻转率;DICE结构可以将翻转截面降低一个数量级,电路面积增加一倍左右;时间冗余延迟+DICE的方法基本可以使电路不发生翻转,但电路面积大大增加且造成一定的延迟。Based on a flip-flop chain trigger of 28 nm bulk silicon CMOS process with different reinforcement measures,the influence of intermediate energy protons on the single event upset(SEU)effect of nanoscale circuit is studied.The 20 MeV,40 MeV,60 MeV,and 100 MeV protons are selected to irradiate the circuit to obtain the relevant SEU cross sections.The results show that with the increase of incident proton energy,the SEU cross section increases and reaches saturation near 8×10^(-14)cm^(-2)/bit around the 60 MeV proton energy point.Analyzing and comparing the experimental data of flip-flop chains with different reinforcement methods,it can be seen that the single layout reinforcement measures can only slightly reduce the turnover rate.The DICE structure can reduce the flipping cross section by one order of magnitude and double the circuit area.The method of time redundancy delay+DICE can basically keep the circuit from flipping,but the circuit area is greatly increased and certain delay is caused.

关 键 词：辐射效应 单粒子翻转 中能质子 触发器 

分 类 号：TN406[电子电信—微电子学与固体电子学]