碳化硅功率器件技术发展综述  

A Review of Silicon Carbide Power Device Technology Development

作　　者：吴炜杰 张宇阳 王朝阳 黄湛为 张帮敏 WU Weijie;ZHANG Yuyang;WANG Zhaoyang;HUANG Zhanwei;ZHANG Bangmin(Sun Yat-Sen University,Guangzhou 510650,China)

机构地区：[1]中山大学,广东广州510651

出　　处：《材料研究与应用》2023年第3期427-439,I0002,共14页Materials Research and Application

摘　　要：第三代半导体SiC因禁带宽、热导率高等优异性能得到广泛关注,SiC功率器件也成为学术界和工业界的研究热点。从SiC材料性质出发,归纳分析了SiC薄膜与SiC功率器件制备工艺,回顾了SiC MOSFET和IGBT器件的发展,讨论了SiC MOSFET和IGBT器件的结构设计优化和性能评估,最后指出SiC器件面临的挑战及发展趋势。The third-generation semiconductor SiC has attracted widespread attention due to its excellent properties such as wide bandgap and high thermal conductivity.SiC power devices have also become a research hotspot in academia and industry.Starting from the properties of SiC materials,this article summarizes and analyzes the preparation processes of SiC thin films and SiC power devices,reviews the development of SiC MOSFETs and IGBT devices,discusses the structural design optimization and performance evaluation of SiC MOSFETs and IGBT devices,and finally summarizes and looks forward to SiC device challenges and development trends.

关 键 词：SIC薄膜 功率器件 制备工艺 MOSFET IGBT 

分 类 号：TN304.2[电子电信—物理电子学]