月基极紫外相机光子计数成像探测器Ge膜的空间质子辐照稳定性  

Space Proton Irradiation Stability of Ge Film for Photon Counting Imaging Detector of Lunar⁃Based Extreme Ultraviolet Camera

作　　者：李云鹏[1] 陈波[2] 何玲平[2] 吕鹏[3] Li Yunpeng;Chen Bo;He Lingping;LüPeng(School of Public Security Information Technology and Intelligence,Criminal Investigation Police University of China,Shenyang 110854,China;Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;School of Materials Science and Engineering,Jiangsu University,Zhenjiang 212013,China)

机构地区：[1]中国刑事警察学院公安信息技术与情报学院,沈阳110854 [2]中国科学院长春光学精密机械与物理研究所,长春130033 [3]江苏大学材料科学与工程学院,江苏镇江212013

出　　处：《半导体技术》2023年第6期470-475,共6页Semiconductor Technology

基　　金：国家自然科学基金联合基金项目(U1931118);辽宁省应用基础研究计划资助项目(2022JH2/101300144);沈阳市中青年科技创新人才支持计划资助项目(RC220488);公安理论及软科学研究计划项目(RKX20201033)。

摘　　要：光子计数成像探测器是月基极紫外相机等空间成像载荷的核心成像器件。Ge膜作为探测器的电荷感应层,在空间质子辐照环境下的稳定性直接影响系统的成像质量。采用Monte-Carlo法仿真了500 nm Ge膜被10、50和100 keV高能质子辐照后,Ge膜内部的质子浓度分布与空位缺陷分布。仿真结果表明,50 keV质子在Ge膜内部产生的空位缺陷对膜层内部损伤最大。对100、230、350和500 nm厚度Ge膜分别进行50 keV质子辐照实验,经方阻仪测试显示,越厚的薄膜辐照后方阻变化越大,500 nm比100 nm Ge膜方阻增加量高约500 MΩ/。通过原子力显微镜(AFM)表征发现,500 nm Ge膜辐照后出现膜层凸起与分离,均方根表面粗糙度由1.63 nm增至约10 nm。研究结果表明,在满足方阻要求的前提下,通过对Ge膜厚度的合理设计,可以有效减小高能质子辐照带来的损伤。Photon counting imaging detector is the core imaging device of space imaging payload such as lunar⁃based extreme ultraviolet camera.Ge film is used as the induced charge layer of the detec⁃tor.The stability of the Ge film in the space proton irradiation environment directly affects the imaging quality of the system.The proton concentration distribution and vacancy defect distribution in the Ge film with the thickness of 500 nm irradiated by high energy protons of 10,50 and 100 keV were simulated by using Monte⁃Carlo method.The simulation results show that the hole defects generated by 50 keV protons in the Ge film cause the greatest damage to the inside of the film.The 50 keV proton irradiation experi⁃ments of Ge films with different thicknesses of 100,230,350 and 500 nm were carried out.The square resistance meter test shows that the thicker the film,the greater the square resistance change after irradiation.The square resistance increase of 500 nm Ge film is about 500 MΩ/□higher than that of 100 nm Ge film.Atomic force microscope(AFM)images show that the 500 nm Ge film is bulged and separated after irradiation.The root mean square surface roughness of the film increases from 1.63 nm to about 10 nm.The results show that the damage caused by high⁃energy proton irradiation can be effectively reduced by reasonably designing the thickness of Ge film under the premise of meeting the square resistance requirements.

关 键 词：Ge膜 质子辐照 方块电阻 光子计数成像探测器 极紫外相机 空间环境适应性 

分 类 号：TN304.11[电子电信—物理电子学]