GaAs芯片上倒装Si芯片的金凸点高度与键合工艺参数优化  

Optimization of Gold Bump Height and Bonding Process Parameters of Silicon Flip⁃Chips Mounted on GaAs Chips

作　　者：厉志强 柳溪溪 张震 赵永志[1] Li Zhiqiang;Liu Xixi;Zhang Zhen;Zhao Yongzhi(The 13 th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第6期527-531,共5页Semiconductor Technology

摘　　要：随着射频集成电路向小型化、高集成方向发展,基于金凸点热超声键合的芯片倒装封装因凸点尺寸小、高频性能优越成为主流技术之一。以GaAs芯片上倒装Si芯片的互连金凸点为研究对象,通过有限元仿真方法,分析了温度和剪切力作用下不同高度金凸点的等效应力,得到金凸点的最优高度值。通过正交试验,研究键合工艺参数(压力、保持时间、超声功率、温度)对金凸点高度和键合强度的影响规律。通过可靠性试验,验证了工艺优化后倒装焊结构的可靠性。结果表明:键合工艺参数对凸点高度的影响排序为压力>超声功率>温度>保持时间,对剪切力的影响排序为压力>超声功率>保持时间>温度。With the development of RF IC toward miniaturization and high integration,flip⁃chip packaging based on gold bump thermosonic bonding has become one of the mainstream technologies due to its small bump size and superior high⁃frequency performance.With the interconnected gold bumps of silicon flip⁃chips mounted on GaAs chips as the research object,the equivalent stress of gold bumps with different heights under the action of temperature and shear force was analyzed by finite element simulation method,and the optimal height of gold bumps was obtained.The influence law of bonding process parameters(force,holding time,ultrasonic power,temperature)on the gold bump height and bonding strength was studied by orthogonal experiment.The reliability of flip⁃chip bonding structure after process optimization was verified by reliability test.The results show that the order of bonding process parameters influence on bump height is force>ultrasonic power>temperature>holding time,and the order of influence on shear force is force>ultrasonic power>bonding time>temperature.

关 键 词：金凸点 热超声键合 倒装 工艺参数 可靠性 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]