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作 者:付秀华[1,2] 刘俊岐 李卓霖 刘海成 任海峰 王一博 韩克旭 FU Xiuhua;LIU Junqi;LI Zhuolin;LIU Haicheng;REN Haifeng;WANG Yibo;HAN Kexu(College of Optoelectronic Engineering,Changchun University of Science and Technology,Changchun 130022,China;Zhongshan Research Institute,Changchun University of Science and Technology,Zhongshan 528436,China;Moral Education and Comprehensive Teaching and Research Training Department,Jilin Provincial Institute of Education,Changchun 130022,China;Guang Chi Technology(Shanghai)Co.,Ltd.,Shanghai 200444,China)
机构地区:[1]长春理工大学光电工程学院,长春130022 [2]长春理工大学中山研究院,中山528436 [3]吉林省教育学院德育·综合教研培训部,长春130022 [4]光驰科技(上海)有限公司,上海200444
出 处:《光子学报》2023年第6期109-117,共9页Acta Photonica Sinica
基 金:2022年度中山市第二批社会公益与基础研究项目(No.2022B2005);长春市激光制造与检测装备科技创新中心长科技合(No.2014219);十三五共用技术预研基金(No.41423060202)。
摘 要:可见光高透射近红外高截止滤光片采用大口径超薄尺寸的玻璃作为基板,在两面同时沉积制备而成,因此对薄膜均匀性及成膜后基板面型有着较高的要求。以Nb/Si作为薄膜靶材,采用反应溅射镀膜的方法,从靶材磁场强度分布、公-自转系统、基板夹具遮挡角度三个方面分析膜厚均匀性的差异,采用对称膜系结构,实现红外截止滤光片上下表面薄膜应力平衡。最终制备的薄膜均匀性在300 mm范围内达到0.13%,基板翘曲度为0.085 mm,满足使用需求。As an important part of the original fingerprint identification under the optical screen,the infrared cut-off filter needs to be plated on a large-diameter and ultra-thin substrate in order to connect the subsequent processing process and facilitate mass production.The substrate surface type has very high requirements.In recent years,many scholars have done a lot of experimental research on the issues related to the uniformity of sputtering coating film thickness,but there are few references on the related research on the uniformity control of ultra-thin and large-area substrates.In the traditional method of coating double-sided film layers,in the process of using ultra-thin and large-diameter substrates,only one side can be plated first,and then the substrate can be taken out and turned over to coat the other side.This operation is inefficient and the risk of substrate chipping is high and the film uniformity is poor,which will cause uneven stress distribution in the film layer,resulting in the bending of the substrate,which can not meet the actual use requirements.In this paper,two materials,SiO2 and Nb2O5,are used as the research objects,and the influence on the film thickness uniformity is analyzed from three aspects:the distribution of the magnetic field intensity of the target material,the public-rotation system,and the shielding angle of the substrate fixture.According to the experimental results,the relative strength of the target magnetic field has a certain relationship with the uniform distribution of the relative thickness of the film,and the relative thickness of the film will also increase when the relative strength of the magnetic field is larger.The revolution system can greatly improve the film thickness uniformity.In this paper,the film thickness uniformity under three rotational speed ratios of 1∶2,2∶1,and 5∶4 is studied.When the rotational speed ratio is 5∶4,the film thickness is uniform,and the uniformity is the best.The film uniformity of SiO2 increases from 17.31%when only rotating
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