InAs基室温中波红外探测器的液相外延生长  

Liquid Phase Epitaxy(LPE) growth of the room-temperature InAs-based mid-infrared photodetector

作　　者：陈泽中[1] 段永飞 林虹宇 张振宇 谢浩 孙艳[2] 胡淑红[2] 戴宁[2,4] CHEN Ze-Zhong;DUAN Yong-Fei;LIN Hong-Yu;ZHANG Zhen-Yu;XIE Hao;SUN Yan;HU Shu-Hong*;DAI Ning(School of Materials and Chemistry,University of Shanghai for Science and Technology,Shanghai 200093,China;Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,Shanghai 200083,China;Zhejiang Lab,Hangzhou 311100,China;Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China)

机构地区：[1]上海理工大学材料与化学学院,上海200093 [2]中国科学院上海技术物理研究所,上海200083 [3]之江实验室,浙江杭州311100 [4]中国科学院大学杭州高等研究院,浙江杭州310024

出　　处：《红外与毫米波学报》2023年第3期306-310,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China (11933006);the Frontier Science Research Project (Key Programs) of the Chinese Academy of Sciences (QYZDJ-SSW-SLH018);the National Natural Science Foundation of China (U2141240)。

摘　　要：材料质量好坏对于获得高性能红外探测器至关重要。提出决定材料质量的关键点在于精准控制材料结构中层与层之间的晶格失配度,报道了晶格失配对材料质量和器件暗电流性能的影响。实验结论表明在液相外延技术生长的InAs/InAsSbP材料体系中,InAs和InAsSbP间的晶格失配不是越小越好,而是有一个最佳值。如果晶格失配偏离这个值,不管是偏大还是偏小,材料的质量都会恶化。阐述了如何调整生长参数以获得合适的晶格失配度。制备了具有适宜晶格失配度的红外探测器件,该探测器零偏压下的室温峰值探测率为6.8×10^(9) cm Hz^(1/2)W^(-1),与国际商用InAs探测器的指标相当。The material quality is very important to obtain the high performance infrared detector.It is presented that the key issue of the material quality is to control the lattice mismatch between the layers of the device architecture.The effects of the lattice mismatch on the material quality and the dark current characteristics were reported.In the InAs/InAsSbP system grown by LPE technology,there is an appropriate value for the lattice mismatch between InAsSbP and InAs.If the lattice mismatch deviates from this value,no matter whether it is smaller or larger,the material quality will deteriorate.Then it was stated how to adjust growth parameters to obtain the appropriate lattice mismatch.The infrared detector made from the device architecture with the appropriate lattice mismatch was fabricated,and the room-temperature peak detectivity of this detector is 6.8×10^(9) cm Hz^(1/2)W^(-1) at zero bias,which is comparable with that of international commercial InAs photodetectors.

关 键 词：半导体四元合金 红外探测器 液相外延 晶格失配 

分 类 号：O78[理学—晶体学]