基于准垂直结构GaN肖特基二极管的S波段限幅器研究  

Research on S Band Microwave Limiter Based on a Quasi-vertical GaN Schottky Barrier Diode

作　　者：邓世雄 刘继斌[1] 刘培国[1] 高长征[2] 康玄武[3] DENG Shi-xiong;LIU Ji-bin;LIU Pei-guo;GAO Chang-zheng;KANG Xuan-wu(College of Electronic Science,National University of Defense Technology,Changsha 410073,China;The 13th Research Institute of CETC,Shijiazhuang 050051,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]国防科技大学电子科学学院,长沙410073 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]中国科学院微电子研究所,北京100029

出　　处：《微波学报》2023年第3期51-54,共4页Journal of Microwaves

摘　　要：当今高功率微波技术发展迅速,电子设备所面临的威胁巨大。GaN肖特基二极管具有较小的开启电压和较高的击穿电压,特别适用于大功率整流电路。文章介绍了一种基于准垂直结构GaN肖特基二极管整流的高功率微波限幅器。测试结果表明,该限幅器在2~4 GHz频带内,可承受脉宽10μs、占空比1%、峰值超过1000 W的功率;其小信号插损小于1 dB,输入输出驻波比小于1.5。该限幅器插损小、耐功率高,可广泛应用于接收机中以提升其可靠性。High power microwave(HPM) technology has greatly developed nowadays.Electronic equipment has to face more and more threaten.GaN Schottky barrier diode is highly suitable for high power rectifier circuit with low forward voltage and higher reverse breakdown voltage.A HPM limiter based on rectifier circuit using a quasi-vertical GaN Schottky diode is introduced in this paper.Result shows that the insertion loss is less than 1 dB at 2-4 GHz and the VSWR is better than 1.5.The limiter can hand up to 1000 W incident power levels with 10 μs pulse width,1% duty cycle.With low insertion loss and extremely high power tolerance,the HPM limiter can be widely used in receivers to improve the reliability.

关 键 词：高功率微波 GAN 肖特基二极管 限幅器 

分 类 号：TN311.7[电子电信—物理电子学]