基于量子点浮栅的有机透明存储器  

Transparent organic memory based on quantum dots floating gate

作　　者：秦世贤 马超 邢俊杰 李博文 张国成[1] QIN Shi-xian;MA Chao;XING Jun-jie;LI Bo-wen;ZHANG Guo-cheng(Research Center for Microelectronics Technology,Fujian University of Technology,Fuzhou 350108,China)

机构地区：[1]福建工程学院微电子技术研究中心,福建福州350108

出　　处：《液晶与显示》2023年第7期919-925,共7页Chinese Journal of Liquid Crystals and Displays

基　　金：福建省自然科学基金(No.2021J011082);科研启动基金(No.GY-Z20041)。

摘　　要：为了适应新一代电子技术的日益发展,开发各种新型存储器显得日益重要。与传统存储器相比,新一代的存储器不但需要更高性能的记忆特性,还需要可以满足灵活性、透明性或神经形态功能等特定应用的需求。本文以有机半导体材料C8-BTBT作为半导体层,PVP量子点共混作为浮栅提出了一种有机透明存储器(透明度≥83%)。器件具有超过40 V的存储窗口,编写/擦除电流比大于103,在104 s后仍能稳定分辨开关态。本文工作为透明柔性器件提供了一种新的解决方案,并预示了它们在下一代透明有机电子领域的潜力。In order to meet the development of the new generation of electronic technology,it is increasingly important to develop different kinds of new memory.Compared with traditional memory,the new generation memory is required to have higher performance memory features,and meet the needs of specific applications such as flexibility,transparency,or neuromorphic functions.In this paper,an organic transparent memory(transparency≥83%)is proposed with organic semiconductor material C8-BTBT as semiconductor layer and PVP quantμm dot blending as floating gate.The device has a memory window of more than 40 V,and the programming/erasing current ratio is more than 103,the switching state can be resolved stably after 104 s.This paper provides a new solution for transparent flexible devices and foreshadows their potential applications in the next generation of transparent organic electronics.

关 键 词：有机薄膜晶体管 存储器 透明器件 量子点 浮栅 

分 类 号：TN321.5[电子电信—物理电子学]