LaAlO_(3)/SrTiO_(3)异质结光存储特性模拟及电阻图像显示  

Simulation of Optical Storage Characteristics of LaAlO_(3)/SrTiO_(3)Heterojunction and Display of Resistance Image

作　　者：杨毅[1] 段伟杰 洪彦鹏 肖文志[1] YANG Yi;DUAN Weijie;HONG Yanpeng;XIAO Wenzhi(School of Computational Science and Electronics,Hunan Institute of Engineering,Xiangtan 411104,China)

机构地区：[1]湖南工程学院计算科学与电子学院,湘潭411104

出　　处：《湖南工程学院学报（自然科学版）》2023年第2期45-49,共5页Journal of Hunan Institute of Engineering(Natural Science Edition)

基　　金：湖南省自然科学基金资助项目(2021JJ30179).

摘　　要：LaAlO_(3)/SrTiO_(3)(LAO/STO)界面上的二维电子气(2DEG)表现出许多新奇的特性,通过探究其中LAO/STO光电特性的电阻响应机制,发现了异质结与神经网络拥有相似的记忆曲线.通过试验模拟了光照对LAO/STO界面电阻率的影响,并与实际曲线相比较.通过LAO/STO在光照下的电阻率变化,又模拟了LAO/STO对光线形状、光线照射时间的响应,并进行电阻的图像显示.结果表明:LAO/STO异质结具有优异的光储特性,且可以有效进行电阻的图像显示.该项工作为LAO/STO异质结在新型光电子器件、图形图像显示装置以及人工智能器件等领域的应用提供了新的思路.The two-dimensional electron gas(2DEG)on the LaAlO_(3)/SrTiO_(3)(LAO/STO)interface shows many novel characteristics.We explore the resistance response mechanism of the photoelectric characteristics of LAO/STO,and find that the heterojunction has a similar memory curve with the neural network.We design a test to simulate the effect of light on the interface resistivity of LAO/STO and compare it with the actual curve.Through the change of resistivity of LAO/STO under light,the response of LAO/STO to light shape and light exposure time is simulated,and the resistance image is displayed.The results show that the LAO/STO heterojunction has excellent optical storage characteristics and can effectively display the resistance image.This work provides a new idea for the application of LAO/STO heterojunction in new optoelectronic devices,graphic and image display devices and artificial intelligence devices.

关 键 词：LaAlO_(3)/SrTiO_(3) 界面效应 光电特性 二维电子气 

分 类 号：TP211.5[自动化与计算机技术—检测技术与自动化装置]