一维Ⅲ族氮化物外延材料的生长及表征综合实验设计  

Comprehensive Experimental Design of Growth and Characterization of Onedimensional Group-III Nitride Epitaxial Materials

作　　者：王文樑[1] Wang Wenliang(School of Materials Science and Engineering,South China University of Technology,Guangdong,510641)

机构地区：[1]华南理工大学材料科学与工程学院,广东510641

出　　处：《当代化工研究》2023年第14期135-137,共3页Modern Chemical Research

基　　金：华南理工大学本科教研教改项目“新工科背景下的《材料现代测试方法》课程改革研究”(项目编号:C9213098);华南理工大学探索性实验项目“Ⅲ族氮化物材料生长与测试”(项目编号:C9226640)。

摘　　要：为开拓学生的科学眼界,针对氮化镓(GaN)材料的制备及表征,设计了一个综合性教学实验。首先,利用化学气相沉积法和分子束外延法分别制备了一维纳米线和纳米柱;其次,采用X射线衍射仪、拉曼光谱仪和扫描电子显微镜对两种GaN样品的结构和形貌进行表征,并研究了生长温度对其表面形貌的影响。通过综合实验设计,学生不仅能够将《材料现代测试方法》等理论课程所学知识与实验相结合,而且在了解相关材料应用前沿的同时提高自身的综合实践能力,激发对科研的兴趣,从而为将来从事科研工作打下基础。In order to broaden scientific horizons of students,a comprehensive teaching experiment is designed around the preparation and characterization of gallium nitride(GaN)materials.Firstly,one-dimensional nanowires and nanorods were prepared by chemical vapor deposition and molecular beam epitaxy,respectively.Afterwards,X-ray diffractometer,Raman spectroscopy and scanning electron microscopy were adopted to characterize the structure and morphology of the two kinds of GaN samples,and the effect of growth temperature on the surface morphology were investigated accordingly.By the comprehensive experiment design,students can not only combine the knowledge learned in the theory course of“Materials Modern Test Methods”with experiments,but also improve their comprehensive practical ability while understanding the cutting-edge application of relevant materials,stimulate their interest in scientific research,and lay a foundation for future scientific research work.

关 键 词：Ⅲ族氮化物 GAN 纳米线 纳米柱 化学气相沉积法 分子束外延法 

分 类 号：TB321[一般工业技术—材料科学与工程]