一种新型双Fin ESD防护单元研究  

Research on a Novel Double-Fin ESD Protection Unit

作　　者：成建兵[1] 周嘉诚 刘立强 张效俊 孙旸 CHENG Jianbing;ZHOU Jiacheng;LIU Liqiang;ZHANG Xiaojun;SUN Yang(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing210023,P.R.China)

机构地区：[1]南京邮电大学集成电路科学与工程学院,南京210023

出　　处：《微电子学》2023年第2期321-325,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61274080)。

摘　　要：为满足小尺寸器件的ESD防护需求,基于Fin技术,提出了一种具有寄生SCR的STI双Fin结构。通过采用双Fin布局和深掺杂技术,减小了器件的基区宽度,避免了Fin技术中由弱电导调制导致的SCR无法开启的现象。仿真结果表明,相比于DFSD结构,新结构失效电流It2/Wlayout从21.67 mA/μm增加到28.33 mA/μm;触发电压V_(t1)从14.08 V减小到9.64 V。在ESD来临时,新结构能够实现有效的开启,泄放大电流。In order to meet the ESD protection requirements of small size devices,a STI double-fin structure with parasitic SCR based on fin technology is proposed.By adopting double-fin layout and deep doping technology,the base region width of the device was reduced,which avoided the SCR failure caused by weak conductivity modulation in fin technology.The simulation results show that compared with DFSD structure,the I_(t2)/Wlayout of the new structure is increased from 21.67 mA/μm to 28.33 mA/μm,and the trigger voltage V_(t1) is decreased from 14.08 V to 9.64 V.The new structure can be turned on effectively and discharge large current under ESD stress.

关 键 词：鳍式场效应晶体管 电导调制 深掺杂 静电放电 

分 类 号：TN342[电子电信—物理电子学] TN306