氮化镓功率器件/模块封装技术研究进展  

Research Progress of GaN Power Device/Module Packaging Technology

作　　者：刘斯奇 梅云辉 LIU Siqi;MEI Yunhui(School of Materials Science and Engineering,Tianjin University,Nankai District,Tianjin 300350,China;School of Electrical Engineering,Tiangong University,Xiqing District,Tianjin 300387,China)

机构地区：[1]天津大学材料科学与工程学院,天津市南开区300350 [2]天津工业大学电气工程学院,天津市西青区300387

出　　处：《中国电机工程学报》2023年第13期5116-5131,共16页Proceedings of the CSEE

基　　金：国家自然科学基金项目(52177189,51922075);天津市科技计划项目(21JCJQJC00150)。

摘　　要：氮化镓(Ga N)作为典型的宽禁带半导体材料,具有高耐温、高耐击穿电压以及高电子迁移速率的优势,封装技术对于充分发挥Ga N的以上优势并保障工作可靠性十分关键。文中首先对比分析Si基、Si C基和Ga N基器件/模块封装的异同,随后从封装杂散电感、封装散热设计和封装连接可靠性3个方面,分别介绍其带来的问题以及解决方案,讨论目前研究可能存在的不足。基于综述分析,最后提出未来Ga N功率器件/模块封装技术亟待解决的问题以及研究展望。GaN offers the benefits of high-temperature resistance,high breakdown voltage,and high electron migration rate as a popular wide bandgap semiconductor material.Packaging technology is critical to make use of these benefits fully and for device to be operated reliably.Firstly,the similarities and differences of Si-based,SiC-based,and GaN-based devices/modules are compared and discussed.The difficulties and solutions are then addressed from the perspectives of package stray inductance,heat dissipation design,and interconnection reliability.The possible shortcomings of the current research are discussed.Based on the review and analysis,this paper finally put forward the urgent problems to be solved in the future on GaN power device/module packaging technology and the research prospects.

关 键 词：GAN高电子迁移率晶体管 功率器件 功率模块 封装技术 杂散电感 散热 可靠性 

分 类 号：TN305.94[电子电信—物理电子学]