P-GaN栅结构GaN基HEMT器件研究进展  

Research Progress of P-GaN Gate Structure GaN-based HEMT Device

作　　者：朱彦旭[1] 宋潇萌 李建伟[1] 谭张杨 李锜轩 李晋恒 ZHU Yanxu;SONG Xiaomeng;LI Jianwei;TAN Zhangyang;LI Qixuan;LI Jinheng(Key Laboratory of Opto-electronics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China;Institute of Software,Chinese Academy of Science,Beijing 100190,China)

机构地区：[1]北京工业大学光电子技术教育部重点实验室,北京100124 [2]中国科学院软件研究所,北京100190

出　　处：《北京工业大学学报》2023年第8期926-936,共11页Journal of Beijing University of Technology

基　　金：国家重点研发计划资助项目(2017YFB0402803);北京市自然科学基金资助项目(4182011)。

摘　　要：增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型器件制备方法。首先,概述了当前制约P-GaN栅结构GaN基HEMT器件发展的首要问题,从器件结构与器件制备工艺这2个角度,综述了其性能优化举措方面的最新研究进展。然后,通过对研究进展的分析,总结了当前研究工作面临的挑战以及解决方法。最后,对未来的发展前景、发展方向进行了展望。Enhanced gallium nitride(GaN)-based high electron mobility transistor(HEMT) is a research hotspot in the field of high-frequency,high-power devices and switching devices.Thanks to its simple,controllable and repeatable fabrication process,P-GaN gate technology has become the most commonly used and the only commercially available technology for the fabrication of GaN-based enhanced devices.First,the primary problems restricting the development of P-GaN gate structure GaN-based HEMT device were summarized,then the latest research progress on performance optimization was reviewed from the aspect of structure and fabrication process.By analyzing the research progress,challenges and solutions of current research work were concluded.Finally,the future development prospects and trends were prospected briefly.

关 键 词：氮化镓(GaN) P-GaN栅技术 高电子迁移率晶体管(high electron mobility transistor HEMT) 增强型器件 结构优化 制备工艺优化 

分 类 号：TN386.3[电子电信—物理电子学]