集成电路HPM损伤机理分析  

Analysis of High Power Microwave Damage Mechanism in Integrated Circuits

作　　者：章勇华[1] 黄文华[1] 李平[1] 杨志强[1] 任伟涛[1] 朱占平[1] ZHANG Yonghua;HUANG Wenhua;LI Ping;YANG Zhiqiang;REN Weitao;ZHU Zhanping(Northwest Institute of Nuclear Technology,Xi’an 710024,China)

机构地区：[1]西北核技术研究所,西安710024

出　　处：《现代应用物理》2023年第2期124-130,共7页Modern Applied Physics

基　　金：高功率微波技术重点实验室基金资助项目(HPM1607)。

摘　　要：针对几种常用的数字和模拟集成电路,开展了高功率微波注入实验研究,获得了损伤阈值,分析了损伤阈值随高功率微波脉冲宽度的变化规律;通过失效分析,确定了高功率微波在集成电路微米量级的端间间隙处形成瞬态强电场,引起端间沿面击穿,并形成自持放电产生等离子区,使击穿电路端间大面积过流烧毁,导致集成电路功能失效;结合大气击穿机理及理论模型计算结果,认为高功率微波引起介质表面空气击穿是其损伤电子系统的重要机理。High power microwave(HPM)injection experiments on several commonly used digital integrated circuits(ICs)and analog ICs are carried out,the damage thresholds are obtained,and the variations of damage thresholds with HPM pulse width are analyzed.According to the failure analysis,it is determined that HPM forms a transient strong electromagnetic field in the micrometer level metal gap between ICs,and causing surface breakdown between the terminals and forming a self-holding discharge to generate a plasma zone,causing a large area of over current burnout between the adjacent metal strips of the breakdown circuit,leading to the functional failure of the integrated circuit.Based on the atmospheric breakdown mechanism and theoretical calculation results,it is concluded that the air breakdown along the surface of the medium caused by HPM is one of the important damage mechanisms for the electronic system.

关 键 词：高功率微波 损伤机理 沿面击穿 失效分析 击穿模型 脉冲宽度效应 

分 类 号：TN015[电子电信—物理电子学] TL99[核科学技术—核技术及应用]