硅晶片化学机械抛光液的研究进展  

Research Progress of Chemical Mechanical Polishing Slurry of Silicon Wafer

作　　者：严嘉胜 何锦梅 吴少彬 陈孙翔 董博裕 王宪章 Yan Jiasheng;He Jinmei;Wu Shaobin;Chen Sunxiang;Dong Boyu;Wang Xianzhang(School of Mechanical Engineering,Guangdong Ocean University,Zhanjiang 524088;Dexu New Material Company Limited at Guangzhou,Guangzhou 510535,China)

机构地区：[1]广东海洋大学机械工程学院,广东湛江524088 [2]德旭新材料(广州)股份有限公司,广东广州510535

出　　处：《广东化工》2023年第14期68-70,共3页Guangdong Chemical Industry

基　　金：广东省科技厅企业科技特派员项目(GDKTP2021026200);广东海洋大学博士科研启动经费(060302012005);高端装备界面科学与技术全国重点实验室开放基金(SKLTKF22B14)。

摘　　要：硅晶片广泛应用于集成电路领域,对其表面质量和平整度提出了极高的要求。化学机械抛光(CMP)可对硅晶片表面实现局部和整体平坦化精细加工,抛光液是影响抛光质量和抛光效率的关键因素之一。本文归纳了抛光液中磨料、pH值调节剂、氧化剂、分散剂和表面活性剂等组成部分的作用及其研究进展,目的在于为硅片CMP抛光液的设计、制备和合理选用提供参考依据。Silicon wafers are widely used in integrated circuits,they require extreme high surface quality and smoothness.Chemical-mechanical polishing(CMP)can be used to flatten the surface of silicon wafer,CMP slurry is one of the key factors affecting the quality and efficiency of polishing.The role and recent research progress of the composition of slurry such as abrasive,PH regulator,oxidizing agent,dispersant and surfactant are comprehensive summarized.The main purpose of this paper is providing a reference for the design,fabrication and reasonable selection of CMP slurry.

关 键 词：化学机械抛光 抛光液 硅晶片 表面粗糙度 材料去除率 

分 类 号：TQ[化学工程]