一种源漏缓冲浮栅型低漏电场效应晶体管  

A Source-Drain Buffered Floating Gate Field-Effect Transistorwith Low Leakage

作　　者：唐强 靳晓诗[1] TANG Qiang;JIN Xiaoshi(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2023年第4期15-18,共4页Microprocessors

摘　　要：为解决当前主流晶体管MOSFET的反向泄漏电流较大的问题,并对传统FINFET做进一步优化,提出一种源漏缓冲浮栅型的具有较低漏电的场效应晶体管。所设计出的双向开关装置具有低静态功耗和低反向泄漏电流,只需一个独立外部供电的栅电极就可控制器件的导通、关断和浮栅擦写功能。通过改变器件中浮栅注入的电荷类型以及半导体中的掺杂浓度,即可使器件工作在不同的模式下,还可使整个器件拥有更低的反向漏电流和更高的正向导通电流。整体结构相互对称,源漏可以互换,因此具有更好的兼容性。In order to solve the problem of large reverse leakage current of current mainstream transistor MOSFET,and further optimize the traditional FINFET,a source-drain buffered floating gate field effect transistor with low leakage is proposed.The designed bidirectional switching device has low static power consumption and low reverse leakage current,and only an independent external power supply gate electrode can control the on/off and floating gate erasing functions of the device.By changing the type of charge injected into the floating gate and the doping concentration in the semiconductor,the device can work in different modes,and the whole device can have lower reverse leakage current and higher forward conduction current.The whole structure is symmetrical and the source and drain can be interchanged,so it has better compatibility.

关 键 词：鳍式场效应晶体管 浮栅 低漏电 低功耗 

分 类 号：TN386[电子电信—物理电子学]