薄膜热电堆(Cu/Cu55Ni45)热流传感器的制备工艺及性能研究  

Preparation Process and Performance of Thin Film Thermopile(Cu/Cu55Ni45)Heat Flux Sensor

作　　者：冯楠茗 代波 王勇[2] 李伟 FENG Nanming;DAI Bo;WANG Yong;LI Wei(State Key Laboratory of Environment-friendly Energy Materials,Southwest University of Science and Technology,Mianyang 621000,China;School of Space Science and Physics,Shandong University,Weihai 264200,China)

机构地区：[1]西南科技大学环境友好能源材料国家重点实验室,绵阳621000 [2]山东大学空间科学与物理学院,威海264200

出　　处：《人工晶体学报》2023年第8期1523-1531,共9页Journal of Synthetic Crystals

基　　金：环境友好能源材料国家重点实验室自主课题(20fksy23,21fksy27)。

摘　　要：本文首先通过磁控溅射技术在单晶Si和Al_(2)O_(3)陶瓷衬底上分别依次沉积厚度为600 nm的Cu和Cu55Ni45薄膜,然后使用微加工技术在10 mm×10 mm的衬底区域内制备了200对串联的热电偶组成薄膜热电堆结构,最后采用反应溅射联合硬掩膜沉积了不同厚度的氧化铝热阻层,使串联的热电偶分别产生冷端和热端。根据Seebeck效应,在热流的作用下薄膜热电堆冷热两端的温差使传感器输出热电信号,实现对热流密度的测量。通过对薄膜热电堆的表征与标定,结果表明:沉积在Si衬底与Al_(2)O_(3)陶瓷衬底上的Cu/Cu55Ni45热电堆中,Cu膜粗糙度分别为20和60 nm,Cu55Ni45膜粗糙度分别为15和20 nm,电阻分别为38.2Ω和2.83 kΩ,灵敏度分别为0.06945和0.02697 mV/(kW·m^(-2))。具有不同表面粗糙度的单晶Si衬底与Al_(2)O_(3)陶瓷衬底会影响在其表面沉积的Cu/Cu55Ni45热电堆表面粗糙度,进而导致薄膜热电堆产生电阻大小差异,此外,Cu/Cu55Ni45热流传感器的输出热电势与热流密度呈现良好的线性关系。In this work,Cu and Cu55Ni45 thin films with a thickness of 600 nm were firstly deposited on single crystal Si and Al_(2)O_(3)ceramic substrates by magnetron sputtering respectively.Then,the thin film thermopiles composed of 200 pairs of in-series thermocouples were fabricated by microfabrication technology in 10 mm×10 mm substrate area.Finally,aluminum oxide layers were deposited by reactive magnetron sputtering as thermal resistance layers,with the help of hard mask.The different thickness of the aluminum oxide layer produces the cold and hot ends in the thin film thermopile,giving rise to a voltage under the irradiation of heat flux by the Seebeck effect,realizing the measurement of heat flux.The thin film thermopiles were analyzed and calibrated.The results show that in the Cu/Cu55Ni45 thermopiles deposited on the Si substrate and Al_(2)O_(3)ceramic substrate,the roughness of the Cu films are 20 and 60 nm,the roughness of Cu55Ni45 films are 15 and 20 nm,the electrical resistance of thermopiles are 38.2Ωand 2.83 kΩ,the sensitivity of thermopiles are 0.06945 and 0.02697 mV/(kW·m^(-2)),respectively.The surface roughness of Cu/Cu55Ni45 thermopiles deposited on single crystal Si substrate and Al_(2)O_(3)ceramic substrate with different surface roughness will be affected,resulting in the difference in electrical resistance of thin film thermopile.In addition,the output thermoelectric voltage exhibits a good linear relationship with heat flux.

关 键 词：薄膜热电堆 磁控溅射 微加工 SEEBECK效应 热流传感器 灵敏度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]