面向散热应用的碳化硅表面热丝化学气相沉积金刚石膜生长速率  

Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications

作　　者：李维汉 乔煜 疏达[1,3] 王新昶 LI Weihan;QIAO Yu;SHU Da;WANG Xinchang(School of Mechanical Engineering,Anhui Polytechnic University,Wuhu 241000,Anhui,China;School of Mechanical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;Nano and Molecular Systems Research Unit,Faculty of Science,University of Oulu,Oulu FIN-90014,Finland)

机构地区：[1]安徽工程大学机械工程学院,安徽芜湖241000 [2]上海交通大学机械与动力工程学院,上海200240 [3]奥卢大学纳米与分子材料研究中心,芬兰奥卢FIN-90014

出　　处：《上海交通大学学报》2023年第8期1078-1085,共8页Journal of Shanghai Jiaotong University

基　　金：国家自然科学基金(52175423);上海市自然科学基金(22ZR1433200);广东省重点领域研发计划项目(2020B010185001)。

摘　　要：金刚石具有极高的导热系数,在热管理中具有广阔的应用前景.基于热丝化学气相沉积法,采用多次沉积工艺在碳化硅表面制备了金刚石厚膜.采用扫描电子显微镜和拉曼光谱仪对金刚石膜进行了表征,系统地研究了热丝功率、碳源浓度和反应压力等工艺参数对金刚石生长速率及质量的影响.研究结果表明,当热丝功率为1600 W、碳源浓度在形核阶段为18/300和生长阶段为14/300、反应压力为4 kPa时制备的金刚石膜质量最佳,此时金刚石膜生长速率约为1.4μm/h.Diamond has an extremely high thermal conductivity,making it to have a great potential as a heat dissipation material.Based on the hot filament chemical vapor deposition(HFCVD)technique,diamond thick films were deposited on silicon carbide substrates by using the multi-step method in this paper.The scanning electron microscopy(SEM)and Raman spectroscopy were adopted for characterizing the samples.The influences of filament power,carbon concentration,and reactive pressure on the growth rate and quality of the diamond films were systematically studied.It is found that the diamond film with the best quality is synthesized by adopting a filament power of 1600 W,a methane/hydrogen flux ratio of 18/300(nucleation stage)and 14/300(growth stage),and a reactive pressure of 4 kPa.The corresponding growth rate is 1.4μm/h.

关 键 词：热丝化学气相沉积 金刚石膜 生长速率 质量 散热 

分 类 号：TQ163[化学工程—高温制品工业] TB383[一般工业技术—材料科学与工程]