MOCVD生长AlN单晶薄膜的气相和表面化学反应综述  

Review of gas phase and surface reactions in AlN MOCVD

作　　者：何晓崐 刘锐 薛园 左然[3] HE Xiaokun;LIU Rui;XUE Yuan;ZUO Ran(Suzhou Institute of Technology,Jiangsu University of Science and Technology,Zhangjiagang 215600,Jiangsu,China;Department of Chemistry and Biochemistry,Oberlin College and Conservatory,Oberlin 44074,OH,USA;School of Energy and Power Engineering,Jiangsu University,Zhenjiang 212013,Jiangsu,China)

机构地区：[1]江苏科技大学苏州理工学院,江苏张家港215600 [2]欧柏林学院化学与生物化学系,美国俄亥俄欧柏林44074 [3]江苏大学能源与动力工程学院,江苏镇江212013

出　　处：《化工学报》2023年第7期2800-2813,共14页CIESC Journal

基　　金：国家自然科学基金项目(61474058)。

摘　　要：作为第三代半导体材料的代表,AlN单晶具有禁带宽度大、击穿电场强度高、电子饱和迁移率高等特点,被广泛应用于紫外和深紫外发光器件的制造。金属有机化学气相沉积(MOCVD)是生长AlN单晶薄膜最主要的技术。由于Al—N键在三种Ⅲ族氮化物(AlN、GaN和InN)中最强,导致MOCVD生长AlN过程的气相寄生反应最为严重,进而造成AlN的生长速率和效率过低、生长窗口过窄等问题。此外,较高的Al—N键能还导致含Al粒子在表面的迁移率过低,致使薄膜表面形貌变差。这些问题都与薄膜生长过程发生的化学反应密切相关。分别从气相反应路径和表面反应机理两方面,较全面地总结了前人针对MOCVD生长AlN薄膜机理开展的研究工作,并介绍了本课题组近年来在该方向取得的研究成果。最后归纳了现阶段MOCVD生长AlN研究中存在的问题与不足,并在此基础上进行了展望。As a representative of the third-generation semiconductor materials,AlN single crystal has the characteristics of large band gap,high breakdown electric field strength,and high electron saturation mobility,and is widely used in the manufacture of ultraviolet and deep ultraviolet light-emitting devices.Metal organic chemical vapor deposition(MOCVD)is the main technique in the manufacture of AlN thin films.Due to the highest binding energy of Al—N among the groupⅢ-nitrides(AlN,GaN and InN),severe parasitic reactions occur in AlN MOCVD,which results in the low growth rate,low growth efficiency and very narrow growth window.Besides,the high Al—N binding energy results in the low mobility of Alcontaining particles on the surface and consequently deteriorating the surface morphology.The above problems are all related with chemical reactions in AlN MOCVD.In this article,we summarize comprehensively previous research work on the MOCVD growth of AlN thin films from two aspects:gas-phase reactions and surface reactions,and introduce some research work by our team in recent years.Finally,the problems and shortcomings in the current research on MOCVD growth of AlN are summarized,and some further researches are prospected.

关 键 词：ALN MOCVD 化学反应 自由基 计算流体力学 计算化学 

分 类 号：O649.2[理学—物理化学] O649.4[理学—化学]