In_(2)O_(3)掺杂对低压ZnO压敏电阻显微结构及电气性能的影响  

Effect of In_(2)O_(3)Doping on Microstructure and Electrical Properties of Low Voltage ZnO Varistors

作　　者：劳学斌 任鑫 孔安廷 江海波 钟美莲 姚政 施利毅[1] LAO Xuebing;REN Xin;KONG Anting;JIANG Haibo;ZHONG Meilian;YAO Zheng;SHI Liyi(College of Sciences,Shanghai University,Shanghai 200444,China)

机构地区：[1]上海大学理学院,上海200444

出　　处：《电瓷避雷器》2023年第4期58-63,共6页Insulators and Surge Arresters

基　　金：上海市自然科学基金(编号:17ZR1410300)。

摘　　要：提出了掺杂In_(2)O_(3)对低压ZnO压敏电阻显微结构的影响及对其综合电气性能的研究。通过改变In_(2)O_(3)的用量,同时借助相关分析方法对压敏电阻的显微结构和电气性能进行综合分析。最终发现,随着In_(2)O_(3)含量的增加,低压ZnO压敏电阻的电气性能得到提升,但是过量的In_(2)O_(3)却会使其残压比和正反极性增加。I-3电阻片具有最佳的电学性能,其电位梯度为115.5 V·mm^(-1),漏电流为1.34μA,非线性系数α为68.1,以及残压比为2.20。其耐8/20μs、10 kA浪涌冲击正面变化变化率为-0.2%,反面变化率-4.8%。The effect of Doping In_(2)O_(3)on the microstructure of low voltage ZnO varistors and its comprehensive electrical properties have been studied.By changing the amount of In_(2)O_(3),the microstructure and electrical properties of varistors were analyzed by correlation analysis method.Finally,it is found that with the increase of In_(2)O_(3)content,the electrical properties of low-voltage ZnO varistors are improved,but excessive In_(2)O_(3)will increase the residual voltage ratio and polarity.The I-3 varistors has the best electrical properties,for the potential gradient of 115.5 V·mm^(-1),leakage current of 1.34μA,nonlinear coefficientαof 68.1,and residual voltage ratio of 2.20.Its resistance to 8/20μs,10kA surge impact positive change rate of-0.2%,and negative change rate of-4.8%.

关 键 词：低压ZNO压敏电阻 In_(2)O_(3)掺杂 残压比 正反极性 

分 类 号：TM54[电气工程—电器]