细间距DRQFN器件的返修工艺  

Repair Process of Fine-pitch DRQFN Devices

作　　者：余春雨[1] 李赛鹏 蒋庆磊[1] 刘刚[1] YU Chunyu;LI Saipeng;JIANG Qingei;LIU Gang(Nanjing Research Institute of Electronics Technology,Nanjing 210039,China)

机构地区：[1]南京电子技术研究所,南京210039

出　　处：《电子工艺技术》2023年第5期58-59,63,共3页Electronics Process Technology

摘　　要：QFN具有优异的电性能、热性能以及尺寸小和轻薄化的特点,广泛地应用于各领域电子产品中。针对细间距双排QFN(DRQFN)器件返修成功率低的问题,提出了双面预上锡的返修方法,并对返修后的焊透率进行测定,对焊点进行金相分析。试验结果表明,通过这种方法返修的焊透率在85%以上,焊点与母材连接处的金属间化合物(IMC)层厚度适中。QFN are widely used in the electronic products because of well electrical and thermal performance,small dimensions and light weight.Aimed at low repair success rate of fine-pitch dual-row QFN devices,a new repair method of double-sided pre-tinning is introduced.The ratio of soldering area is measured by X-ray,the metallographic analysis is conducted on the solder joints.The results show that the ratio of soldering area is higher than 85%,and the thickness of IMC layer at the junction between solder joints and base material is moderated.

关 键 词：QFN 返修方法 焊透率 IMC层 可靠性 

分 类 号：TN405[电子电信—微电子学与固体电子学]