一种高可靠性三相全桥IGBT驱动电路的设计  

Design of A High Reliability Three Phase Full Bridge IGBT Driver Circuit

作　　者：邢鑫怡 程心 王柯凡 金超 XING Xinyi;CHENG Xin;WANG Kefan;JIN Chao(School of Microelectronics,Hefei University of Technology,Hefei 230601,China)

机构地区：[1]合肥工业大学微电子学院,合肥230601

出　　处：《自动化与仪表》2023年第9期1-5,共5页Automation & Instrumentation

基　　金：安徽省自然科学基金项目(2108085MF226)。

摘　　要：该文基于X-FAB 1.0μm高压SOI工艺,提出一种适用于600 V高压下的三相全桥IGBT驱动电路,包括输入接口电路、死区时间产生电路、高低压电平位移电路以及其它保护电路。其中针对输入信号可能同时有效的问题,设计了一种可以对输入信号的错误状态进行判断的死区时间产生电路,避免因高、低侧信号同时输入有效电平所造成的错误;高压驱动部分采用一种具有隔离功能的新型电平位移电路,可以减小高低压地电位之间的串扰,有效提高了驱动电路的可靠性。仿真结果表明,高侧浮动电压的范围为0~600 V,能够实现三相高低通路驱动后级的IGBT功率器件,高侧通路电压的输出范围为0~615 V,低侧通路电压的输出范围为0~15 V,驱动电流最大可达0.8 A,高低侧输出信号之间的死区时间为1.2μs,最高工作频率100 kHz。Based on X-FAB 1.0μm high-voltage SOI process,the paper proposes a 600 V three-phase full bridge IGBT driver circuit.The whole driver circuit integrates input interface circuit,dead time generation circuit,high-voltage level shift circuit,low-voltage level shift circuit,and other protection circuit.The dead time generation circuit that can judge the error state of the input signal is designed to avoid the error caused by the simultaneous input of valid levels of high and low-side signals.The high voltage driving part of the circuit adopts a new level shift circuit with isolation function,which can reduce the crosstalk between high and low voltage ground potentials and effectively improve the reliability of the driver circuit.The simulation results show that,the high input floating voltage ranges from 0~600 V,enabling three high and three low phases to drive the rear IGBT power devices.The range of the high output voltage is from 0~615 V,and range of the low output voltage is from 0~15 V.The maximum driving current can reach 0.8 A.The dead time between the high and low output signals is 1.2μs,and the maximum operating frequency is 100 kHz.

关 键 词：IGBT驱动电路 三相全桥 SOI工艺 电平位移 

分 类 号：TN432[电子电信—微电子学与固体电子学]