A向蓝宝石晶片化学机械抛光研究  

Study on chemical mechanical polishing of A-plane sapphire wafer

作　　者：陈国美 陈凤[1] 倪自丰 白亚雯 CHEN Guomei;CHEN Feng;NI Zifeng;BAI Yawen(School of Intelligent Equipment and Automotive Engineering,Wuxi Vocational Institute of Commerce,Wuxi 214153,China;School of Mechanical Engineering,Jiangnan University,Wuxi 214122,China;Key Construction Laboratory of IoT Application Technology,Wuxi Taihu University,Wuxi 214064,China)

机构地区：[1]无锡商业职业技术学院智能装备与汽车工程学院,江苏无锡214153 [2]江南大学机械工程学院,江苏无锡214122 [3]无锡太湖学院江苏省物联网应用技术重点建设实验室,江苏无锡214064

出　　处：《电镀与涂饰》2023年第17期75-82,共8页Electroplating & Finishing

基　　金：国家自然科学基金(51305166,51675232);江苏省高校自然科学研究项目(19KJB460023);江苏省高校青蓝工程(2021);无锡商业职业技术学院超精密加工与智能制造科研创新团队(XTD202107);无锡商业职业技术学院智能制造与服务协同创新中心科研平台(KYPT20309);无锡商业职业技术学院机器视觉工程技术中心科研平台(KYPT21304);无锡市软课题项目(KX-23-C116)。

摘　　要：采用正交试验和单因素实验,研究了磨粒种类(包括SiO_(2)、Al_(2)O_(3)和CeO_(2))和抛光工艺参数(包括抛光压力、抛光盘转速和抛光液流量)对A向蓝宝石(1120)化学机械抛光(CMP)效果的影响。通过超精密分析天平计算材料去除率,原子力显微镜观察抛光表面形貌。结果表明:在A向蓝宝石晶片CMP抛光过程中,胶体SiO_(2)磨粒比Al_(2)O_(3)和CeO_(2)磨粒的抛光效果好。抛光工艺参数对A向蓝宝石材料去除率的影响程度主次顺序为抛光压力、抛光盘转速和抛光液流量。当抛光压力为14.5 kPa,抛光盘转速为80 r/min,抛光液流量为90 mL/min时,A向蓝宝石晶片抛光效果最优,材料去除率达到2 366 nm/h,表面粗糙度(Ra)为0.80 nm左右。The effects of different abrasives i.e.SiO_(2),Al_(2)O_(3),and CeO_(2),and process parameters i.e.polishing pressure,disc rotation speed,and slurry flow rate on chemical mechanical polishing(CMP)of A-plane sapphire(1120)were studied by orthogonal test and single-factor experiments.The material removal rate was calculated by weighing method using an ultra-precision analytical balance,and the morphology of polished surface was observed by atomic force microscopy.The results showed that the CMP effectiveness of colloidal SiO_(2) abrasives was better than that of Al_(2)O_(3) and CeO_(2) abrasives for A-plane sapphire wafer.The effects of the said process parameters on the material removal rate in CMP of A-plane sapphire wafer were in the following descending order:polishing pressure>disc rotation speed>slurry flow rate.The polishing effectiveness was the best with a material removal rate of 2366 nm/h and a surface roughness(Ra)of about 0.80 nm at polishing pressure 14.5 kPa,disc rotation speed 80 r/min,and slurry flow rate 90 mL/min.

关 键 词：蓝宝石晶片 化学机械抛光 磨粒 正交试验 材料去除率 表面粗糙度 

分 类 号：TN305[电子电信—物理电子学]