分子束外延HgTe/CdTe超晶格工艺研究  

Research on molecular beam epitaxygrowth HgTe/CdTe superlattice

作　　者：高达[1] 李震[1] 贺融 王丹 邢伟荣[1] 王丛[1] 折伟林[1] GAO Da;LI Zhen;HE Rong;WANG Dan;XING Wei-rong;WANG Cong;SHE Wei-lin(North China Research Institute of Electro-Optics,Beijing 100015,China;Chongqing Jialing Huaguang Photoelectric Technology Co.,Ltd.,Chongqing 400700,China)

机构地区：[1]华北光电技术研究所,北京100015 [2]重庆嘉陵华光光电科技有限公司,重庆400700

出　　处：《激光与红外》2023年第9期1384-1387,共4页Laser & Infrared

摘　　要：报道了分子束外延生长HgTe/CdTe超晶格结构相关技术。采用HgTe/CdTe超晶格结构进行As掺杂是降低As掺杂元素激活温度的技术路径之一。本文采用分子束外延技术在3 in硅衬底上获得了HgTe/CdTe超晶格结构材料,并采用250℃低温退火获得了激活的原位As掺杂碲镉汞材料。In this paper,molecular beam epitaxy(MBE)growth of HgTe/CdTe superlattices structure related technology is introduced.As doping with HgTe/CdTe superlattice structure is one of the technical paths to reduce the activation temperature of as doped HgCdTe.HgTe/CdTe superlattice materials are obtained on 3 inch silicon substrates by molecular beam epitaxy,and activated in situ As doped HgCdTe materials are obtained by low temperature annealing at 250℃.

关 键 词：分子束外延 碲镉汞 HgTe/CdTe超晶格 

分 类 号：TN213[电子电信—物理电子学] O436[机械工程—光学工程]