ICPCVD低温生长非晶硅的工艺及光学特性研究  

Technology and Optical Properties of Amorphous Silicon Grown at Low Temperature by ICPCVD

作　　者：王进[1] 张伟[1] 冷家君 韩鹤彬 沈文超 陆铖灵 张学敏[1] WANG Jin;ZHANG Wei;LENG Jiajun;HAN Hebin;SHEN Wenchao;LU chengling;ZHANG Xuemin(Nano Fabrication Facility,Suzhou Institute of Nano-tech and Nano-bionics,CAS,Suzhou 215123,China)

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台,苏州215123

出　　处：《真空科学与技术学报》2023年第9期731-737,共7页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研发项目(2021YFC2203400)。

摘　　要：文章利用ICPCVD在100℃及以下玻璃和蓝宝石片衬底上生长非晶硅薄膜,并通过调节Ar和SiH4气体流量比例、射频功率及衬底温度等参数,实现低温下高质量非晶硅薄膜的生长。随后用拉曼光谱表征分析研究了衬底温度变化对非晶硅薄膜沉积质量的影响,并计算出衬底温度为100℃时,非晶硅薄膜的结晶分数和微晶尺寸分别为64.4%和4.7 nm。此外还研究了非晶硅薄膜折射率和透过率等光学特性,并计算出薄膜的光学带隙最低为1.68。最后制备了两种a-Si/SiO_(2)/a-Si布拉格反射结构,厚度分别为36/100/41 nm和62/132/60 nm。两种结构在可见光和红外波段分别实现了90.4%和88.9%的最高反射率。In this paper,amorphous silicon thin films were grown on glass and sapphire substrates at temperatures of 100℃and below,using the ICPCVD method.The growth of high-quality amorphous silicon films at low temperatures was achieved by adjusting parameters such as the gas flow ratio of Ar to SiH4,radio frequency power,and substrate temperature.The effect of substrate temperature on the deposition quality of amorphous silicon films was characterized and analyzed using Raman spectroscopy.It was found that at a substrate temperature of 100°C,the crystalline fraction and microcrystalline size of the amorphous silicon film were 64.4%and 4.7 nm,respectively.In addition,the optical properties such as refractive index and transmittance of the amorphous silicon films were studied,and the calculated optical bandgap of the films was found to be 1.68 eV.Finally,two types of a-Si/SiO_(2)/a-Si Bragg reflector structures were fabricated with thicknesses of 36/100/41 nm and 62/132/60 nm,respectively.These two structures achieved high reflectivity of 90.4%in the visible light range and 88.9%in the infrared range,respectively.

关 键 词：ICPCVD 非晶硅薄膜 射频功率 折射率 布拉格反射 

分 类 号：O471.4[理学—半导体物理]