抗单粒子辐射LVDS驱动器设计  

Design of Radiation Hardened LVDS Driver against Single Event Transient

作　　者：赵金翔 周昕杰[2] 郭业才[1] 马艺珂 颜元凯 ZHAO Jin-xiang;ZHOU Xin-jie;GUO Ye-cai;MA Yi-ke;YAN Yuan-kai(School of Electronic and Information Engineering,Nanjing University of Information Science and Technology;No.58th Research Institute of China Electronics Technology Group Corporation)

机构地区：[1]南京信息工程大学电子与信息工程学院 [2]中国电子科技集团第五十八研究所

出　　处：《中国集成电路》2023年第10期46-51,共6页China lntegrated Circuit

基　　金：江苏省自然科学基金项目(No.BK20211040)。

摘　　要：为了减小单粒子效应对低电压差分信号(Low Voltage Differential Signal,LVDS)驱动器电路的影响,对LVDS内部模块电路进行单粒子脉冲仿真,找出电路中单粒子敏感节点,并进行单粒子加固设计。该电路基于0.18μm 1P5M CMOS工艺实现,传输速率为200Mbps,版图面积为464×351μm^(2),在3.3V电源电压下功耗为11.5mW。辐射试验采用Ge粒子试验,在入射能量为210MeV,线性能量转移LET为37.3MeV·cm^(2)/mg辐射情况下,该LVDS驱动器电路传输数据未发生错误。To reduce the single event transient effect on LVDS driver circuit,the single event pulse simulation is performed in the LVDS internal module circuit to find out the single event sensitive nodes and the radiation hardened design is carried out.This circuit is based on 0.18μm 1P5M CMOS process,with transmission rate of 200Mbps,layout area of 464×351μm^(2),and power consumption of 11.5mW under 3.3V supply voltage.The radiation test is carried out by using Ge ion.Under the condition that the radiation energy reaches 210MeV and the linear energy transfer LET is 37.3MeV·cm2/mg,there is no error in the LVDS driver circuit.

关 键 词：低电压差分信号 单粒子瞬态扰动 辐射加固 辐射效应 

分 类 号：TN431[电子电信—微电子学与固体电子学]