不同偏压下DCMS和DCMS/HiPIMS共溅射铜薄膜的结构和性能  

Structure and Properties of DCMS and DCMS/HiPIMS Co-sputtered Copper Films under Different Bias Voltages

作　　者：黄敏 易勇 刘艳松[2] 谢春平 何智兵[2] HUANG Min;YI Yong;LIU Yansong;XIE Chunping;HE Zhibing(State Key Laboratory of Environment-friendly Energy Materials,Southwest University of Science and Technology,Mianyang 621010,Sichuan,China;Research Center of Laser Fusion,China Academy of Engineering Physics,Mianyang 621900,Sichuan,China)

机构地区：[1]西南科技大学环境友好能源材料国家重点实验室,四川绵阳621010 [2]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《西南科技大学学报》2023年第3期1-7,29,共8页Journal of Southwest University of Science and Technology

基　　金：国家自然科学基金(21875061)。

摘　　要：采用DCMS(直流磁控溅射)和DCMS/HiPIMS(直流磁控溅射/高功率脉冲磁控溅射)共溅射在不同负偏压下沉积铜薄膜,使用X射线衍射仪、场发射扫描电子显微镜、白光干涉仪、纳米压痕技术和四点探针法对薄膜的晶体取向、形貌、粗糙度、力学和电学性能进行表征。结果表明:与DCMS铜薄膜相比,随着负偏压增加,DCMS/HiPIMS共溅射铜薄膜晶粒尺寸先减小后增大,Cu(111)取向减弱,硬度逐渐增大,电阻率逐渐降低;高负偏压(100 V)下Cu(111)向Cu(220)转变,薄膜致密,表面粗糙度减小,硬度增大(约3.5 GPa),电阻率降低(约2μΩ·cm)。铜薄膜的结构和性能强烈依赖于由HiPIMS和负偏压共同决定的铜离子通量和能量。Copper films were deposited by DCMS(direct current magnetron sputtering)and DCMS/HiPIMS(direct current magnetron sputtering/high-power impulse magnetron sputtering)co-sputtering under various substrate negative biases.The crystal orientation,morphology,roughness,mechanical and electrical properties of the films were characterized by X-ray diffraction,field emission scanning electron microscope,white light interferometer,nano-indentation technique and four-point probe method.The results show that compared with DCMS copper films,the grain size of DCMS/HiPIMS co-sputtered copper films first decreases and then increases with the increase of negative bias,the Cu(111)orientation weakens,the hardness gradually increases,and the resistivity gradually decreases.Under high negative bias(100 V),Cu(111)transforms to Cu(220),the film is compact,the surface roughness decreases,the hardness increases(about 3.5 GPa),and the resistivity decreases(about 2μΩ·cm).The structure and properties of copper thin films are strongly dependent on the copper ion flux and energy determined by HiPIMS and negative bias.

关 键 词：直流磁控溅射 高功率脉冲磁控溅射 铜薄膜 衬底偏压 硬度 电阻率 

分 类 号：O484[理学—固体物理] TG174.444[理学—物理]