2-6 GHz小型化、高效率GaN功率放大器  

2-6 GHz Small-Size and High-Efficiency GaN Power Amplifier

作　　者：刘健[1] 张长城 崔朝探 李天赐 杜鹏搏[1,2,3] 曲韩宾 LIU Jian;ZHANG Changcheng;CUI Zhaotan;LI Tianci;DU Pengbo;QU Hanbin(China Electronics Technology Group Corporation No.13 Research Institute,Shijiazhuang 050051,China;North-China Integrated Circuit Co.,Ltd.,Shijiazhuang 050200,China;Hebei Satellite Communication RF Technology Innovation Center,Shijiazhuang 050200,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]河北新华北集成电路有限公司,石家庄050200 [3]河北省卫星通信射频技术创新中心,石家庄050200

出　　处：《电子与封装》2023年第9期50-54,共5页Electronics & Packaging

摘　　要：基于GaN功率放大器小型化、轻薄化的发展趋势,选用陶瓷方形扁平无引脚(CQFN)管壳封装,设计了一种2~6GHz宽频带、小尺寸、高效率的功率放大器,并阐述了设计方法和研制过程。随着器件功率密度的不断升高,散热问题成为设计中不可忽略的因素,分别采用热仿真分析及红外热成像测试方法,得到功率放大器芯片的最高温度为198.61℃,能满足散热需求。功率放大器尺寸为7.0mm×7.0mm×1.2mm,在连续波测试条件下,漏极电压为28V,工作频带为2~6GHz,饱和输出功率大于40.5dBm,功率增益大于23dB,功率附加效率大于35%,测试结果均满足实际需求。Based on the development trend of miniaturization and thinness of GaN power amplifiers,a 2-6 GHz wide-band,small-size,and high-efficiency power amplifier is designed by choosing ceramic quad flat no-lead(CQFN)package,and the design method and development process are described.With the increasing power density of the component,the heat dissipation problem has become a factor that cannot be ignored in the design.Thermal simulation analysis and infrared thermal imaging test methods are used respectively to obtain the maximum temperature of the power amplifier is 198.61℃,which can meet the heat dissipation requirements.The size of the power amplifier is only 7.0 mmx7.0 mmx1.2 mm.Under the condition of continuous wave test,the drain voltage is 28 V,the frequency band is 2-6 GHz,the saturated output power is more than 40.5 dBm,the power gain is more than 23 dB,and the power additional efficiency is more than 35%.The test results all meet the actual requirements.

关 键 词：GaN功率放大器 陶瓷方形扁平无引脚管壳封装 小型化 高效率 热仿真分析 

分 类 号：TN305.94[电子电信—物理电子学]