一种并联SiC MOSFETs的静态均流方法  

A STATIC CURRENT SHARING METHOD FOR PARALLELED SiC MOSFETS

作　　者：刘兴瑜 杜明星[1] 尹金良 欧阳紫威 Liu Xingyu;Du Mingxing;Yin Jinliang;Ouyang Ziwei(Tianjin Key Laboratory of Control Theory&Applications in Complicated System,Tianjin University of Technology,Tianjin 300384,China;Department of Electrical Engineering,Technical University of Denmark,Lyngby 2800 Kgs,Denmark)

机构地区：[1]天津市复杂系统控制理论及应用重点实验室(天津理工大学),天津300384 [2]丹麦技术大学电气工程系,灵比2800 Kgs

出　　处：《太阳能学报》2023年第7期147-154,共8页Acta Energiae Solaris Sinica

基　　金：天津市技术创新引导专项(基金)(20YDTPJC00510)。

摘　　要：在光伏发电或风力发电等大电流应用场合,由于并联SiC MOSFETs功率源极寄生电感和漏极寄生电感的不匹配会导致静态电流的不平衡,该文提出一种用于并联SiC MOSFETs静态均流的方法。该文首先分析并解决因阈值电压不匹配造成的动态不平衡电流问题,然后在其基础上解决源极寄生电感不匹配造成的动态不平衡电流问题,最后在无阈值电压不匹配和源极寄生电感不匹配造成的动态不平衡电流的基础上解决漏极寄生电感不匹配造成的静态不平衡电流问题。最终,通过实验验证了该文所提出的静态均流方法的有效性。In high current applications such as photovoltaic power generation or wind power generation,due to the static unbalanced current resulting from the mismatch between the power source parasitic inductances and that between the drain parasitic inductances respectively,a static current sharing method for paralleled SiC MOSFETs is proposed in this paper.This paper analyses and solves the problem of the dynamic unbalanced current resulting from the mismatched threshold voltage firstly.And then the problem of the dynamic unbalanced current caused by the mismatched source parasitic inductance is solved on the basis above.Finally,the problem of the static unbalanced current caused by the mismatched drain parasitic inductance is solved on the basis that there is no the dynamic unbalanced current caused by the mismatched threshold voltage and the mismatched source parasitic inductance.The effectiveness of the static current sharing method proposed in this paper is verified by experiments.

关 键 词：碳化硅 静态分析 动态分析 寄生电感 均流 

分 类 号：TN386[电子电信—物理电子学]