GaN基半导体中载流子的自旋注入、弛豫及调控  

Spin injection,relaxation,and manipulation of carriers in GaNbased semiconductors

作　　者：张仕雄 唐宁[1] 孙真昊 陈帅宇 沈波[1] ZHANG ShiXiong;TANG Ning;SUN ZhenHao;CHEN ShuaiYu;SHEN Bo(State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China)

机构地区：[1]北京大学物理学院,人工微结构和介观物理国家重点实验室,北京100871

出　　处：《中国科学：物理学、力学、天文学》2023年第10期146-157,共12页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：国家重点研发计划(编号:2022YFB3605600,2018YFE0125700);国家自然科学基金(编号:62225402,61927806)资助项目。

摘　　要：GaN基半导体材料由于其电场可控的自旋轨道耦合以及高于室温的居里温度,在半导体自旋电子学领域引起了广泛的关注.载流子的自旋注入、弛豫和调控是发展半导体自旋电子器件的关键问题.本文回顾了基于时间分辨克尔光谱和平面自旋阀电学测量对GaN基半导体中载流子的自旋注入、弛豫和调控的研究进展.对GaN基半导体的精细能带结构、自旋轨道耦合、自旋弛豫机制及自旋调控等进行了讨论,总结了GaN基半导体自旋电子器件的研究现状并提出展望.Gallium nitride-based(GaN-based)semiconductors have gained considerable interest from researchers in the community of semiconductor spintronics owing to their electric-field controllable spin-orbit coupling and because their Curie temperature is higher than room temperature.Spin injection,relaxation,and manipulation of itinerant electrons and holes are critical issues in developing spintronic semiconductor devices.Herein,the research progress on spin injection,relaxation,and manipulation of the carriers in GaN-based semiconductors is reported and investigated using a timeresolved Kerr rotation spectrum and spin-valve electrical measurements.The fine band structure,spin-orbit coupling,spin relaxation mechanism,and spin manipulation in GaN-based semiconductors are discussed in detail.Finally,the research on developing GaN-based spintronic semiconductor devices is summarized,and the application prospect is discussed herein.

关 键 词：GAN基半导体 自旋轨道耦合 自旋弛豫 

分 类 号：O471[理学—半导体物理]