TSV电镀铜添加剂及作用机理研究进展  

Research progress on additives and mechanism of copperelectroplating for TSV

作　　者：马盛林[1,2] 王燕[2,3] 陈路明 杨防祖 王岩[4] 王其强[1] 肖雄 Shenglin Ma;Yan Wang;Luming Chen;Fangzu Yang;Yan Wang;Yan Wang;Qiqiang Wang;Xiong Xiao(Pen-Tung Sah Institute of Micro-Nano Science and Technology,Xiamen University,Xiamen 361005,China;National Engineering Research Center of high-end electronic Chemicals,Xiamen University,Xiamen 361005,China;College of Chemistry and Chemical Engineering,Xiamen University,Xiamen 361005,China;Xiamen University of Technology,Xiamen 361024,China)

机构地区：[1]厦门大学萨本栋微米纳米技术研究院,厦门361005 [2]厦门大学高端电子化学品国家工程研究中心,厦门361005 [3]厦门大学化学化工学院,厦门361005 [4]厦门理工学院,厦门361024

出　　处：《中国科学：化学》2023年第10期1891-1905,共15页SCIENTIA SINICA Chimica

基　　金：厦门大学校长基金项目(编号:2072022)。

摘　　要：后摩尔时代,TSV三维互连成为高端电子器件制造的关键技术之一.TSV电镀铜填充是主流金属化的方法面向晶圆级TSV互连工艺集成应用.本文总结了电镀铜添加剂的国内外研究与发展现状,主要包括加速剂、抑制剂以及季铵盐整平剂、含氮聚合物整平剂、含氮杂环整平剂、无机分子整平剂的分子结构,添加剂与Cl−协同作用关系,主要添加剂分子之间协同作用关系,TSV电镀铜填充机理模型等,并凝练提出了TSV电镀铜添加剂及作用机理研究面临的关键问题,以期为TSV添加剂以及作用机理的研究带来一定启发.In the post-Moore era,through silicon via(TSV)three-dimensional interconnection has become one of the key technologies in the manufacturing of high-end electronic devices,while the mainstream method of TSV metallization is filling vias with copper electroplating.For the integration applications of wafer-level TSV interconnect process,this paper summarizes the current research and development of copper electroplating additives at home and abroad,including accelerators,suppressants and quaternary ammonium levelers,nitrogen-containing polymer levelers,nitrogen-containing heterocyclic levelers,inorganic levelers,additives and chloride ion synergistic relationship,the synergistic relationship between main additives molecules,TSV electroplated copper filling mechanism model.The key issues faced by the studies of TSV copper-electroplating additives and their action mechanisms are extracted and presented for bringing some inspiration to the study of TSV additives and their action mechanism.

关 键 词：TSV 电镀铜 添加剂 作用机理 TSV电镀铜填充机理 

分 类 号：TN05[电子电信—物理电子学] TQ153.14[化学工程—电化学工业]