高端电子制造中电镀铜添加剂研究进展  

Research progress of additives for electroplating copper in high-endelectronic manufacturing

作　　者：郑超杰 张涛 李海蒂 宋世琪 沈喜训 李巧霞 何为 陈苑明 姜艳霞[5] 黄蕊 徐群杰 Chaojie Zheng;Tao Zhang;Haidi Li;Shiqi Song;Xixun Shen;Qiaoxia Li;Wei He;Yuanming Chen;Yanxia Jiang;Rui Huang;Qunjie Xu(Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power,Shanghai University of Electric Power,Shanghai 200090,China;Shanghai Engineering Research Center of Energy-Saving in Heat Exchange Systems,Shanghai 200090,China;Shanghai Institute of Pollution Control and Ecological Security,Shanghai 200092,China;School of Materials and Energy,University of Electronic Science and Technology of China,Chengdu 610054,China;College of Chemistry and Chemical Engineering,Xiamen University,Xiamen 361005,China)

机构地区：[1]上海电力大学,上海市电力材料防护与新材料重点实验室,上海200090 [2]上海热交换系统节能工程技术研究中心,上海200090 [3]上海污染生态控制研究院,上海200092 [4]电子科技大学材料与能源学院,成都610054 [5]厦门大学化学化工学院,厦门361005

出　　处：《中国科学：化学》2023年第10期1906-1921,共16页SCIENTIA SINICA Chimica

基　　金：国家自然科学基金面上项目(编号:21972090);中国科学院学部咨询评议项目(编号:2020-HX02-B-030);上海市科委项目(编号:19DZ2271100)。

摘　　要：电镀铜填充微孔技术是集成电路高端电子制造中电子互连材料制程中的主要技术工艺,铜互连材料的填充质量直接影响集成电路的可靠性和稳定性.电镀添加剂是实现电镀铜填微孔及影响填充质量和行为的关键因素.针对当前集成电路发展对高密度电子互连材料制造的高要求,本文概括了近些年国内外集成电路上电镀铜添加剂的研究现状,着重阐述加速剂、抑制剂和整平剂分子结构与表界面作用机制以及添加剂协同作用下实现超填充的填充机制,并针对现有研究现状提出未来需要深入探讨的科学问题和研究方向,为电子电镀铜添加剂的开发提供参考.Electroplated copper-filled microhole technology is the main technology in the manufacture of electronic interconnecting materials in high-end electronic manufacturing of integrated circuits.The filling quality of copper interconnect materials directly affects the reliability and stability of integrated circuits.Electroplating additives are the key factors in realizing the micro-hole filling of electroplated copper and affect the filling quality and behavior.In view of the high requirements of the current development of integrated circuits for the manufacture of high-density electronic interconnection materials,this paper summarizes the current research status of copper plating additives on integrated circuits at home and abroad in recent years,focusing on the mechanism of interaction between the molecular structure of accelerators,inhibitors,and levelers and the surface interface,as well as the filling mechanism of super-filling under the synergic action of additives.According to the current research status,the scientific problems and research directions that need to be further discussed in the future are put forward to provide a reference for the development of electronic copper plating additives.

关 键 词：电镀铜 孔金属化 添加剂 超级填充 

分 类 号：TN405[电子电信—微电子学与固体电子学] TQ153.14[化学工程—电化学工业]