SiC芯片微型化及发展趋势  

Review on miniaturization and development trends of SiC devices

作　　者：张园览 张清纯 ZHANG Yuanlan;ZHANG Qingchun(Academy for Engineering&Technology,Fudan University,Shanghai 200433,China;Ningbo Research Institute,Fudan University,Ningbo,Zhejiang 315336,China)

机构地区：[1]复旦大学工程与应用技术研究院,上海200433 [2]复旦大学宁波研究院,浙江宁波315336

出　　处：《机车电传动》2023年第5期46-62,共17页Electric Drive for Locomotives

基　　金：国家自然科学基金项目(62150710546)。

摘　　要：新能源汽车与光伏作为SiC器件发展的重要推手,促进国内碳化硅产业链日趋完善,设计和制造进展快速,部分制造商器件特性已达到或接近国际领先水平。然而,由于SiC器件价格偏高,器件成本成为限制SiC器件进一步渗透市场的最主要因素。SiC芯片微型化能够显著降低芯片成本,已成为进一步加快SiC技术在新能源领域的大规模应用的有效途径之一。文章对近年来SiC芯片微型化的发展进行了梳理总结,对芯片微型化的必要性进行了分析,并提出了SiC芯片微型化的解决办法,阐述了国际SiC芯片微型化进展,对国内SiC技术近阶段的快速发展进行了阶段性总结,并揭示了芯片微型化将面临的各种挑战。最后,对国内SiC器件发展的机遇和未来进行了展望,为进一步研发提供思路和参考。Electrical vehicles and photovoltaic applications played important roles in the development of SiC devices,and promot‐ed the improvement of the SiC industry chain in China.The design and manufacturing are developing rapidly,and the device perfor‐mance of several domestic manufacturers has reached or approached the international leading level of SiC commercial products.Howev‐er,the high price of SiC based devices still limits their further penetration into the power market.The miniaturization of SiC chips can significantly reduce the chip cost and has become one of the effective ways to further accelerate the large-scale application of SiC tech‐nologies in the power field.The necessity of SiC device miniaturization was analyzed,feasible solutions were proposed,and the rapid progress of SiC technologies was summarized.The major challenges for SiC device miniaturization were revealed,and the prospective de‐velopment opportunities and future of SiC devices were described to provide a reference for further development of SiC power technologies.

关 键 词：碳化硅 宽禁带半导体 功率器件 微型化 金属-氧化物-半导体场效应晶体管 

分 类 号：TN304.24[电子电信—物理电子学]