基于忆阻器结构的Ge基光控晶体管制备及其光电性能研究  

Preparation and Photoelectric Properties Research on Ge-based Phototransistor Based on Memristor Structure

作　　者：徐顺 陈冰 XU Shun;CHEN Bing(College of Automotive Technology,Zhejiang Technical Institute of Economics,Hangzhou 310018,CHN;College of Mechanical Engineering,Zhejiang Sci-Tech University,Hangzhou 310018,CHN;College of Information Science&Electronic Engineering,Zhejiang University,Hangzhou 310027,CHN)

机构地区：[1]浙江经济职业技术学院汽车技术学院,杭州310018 [2]浙江理工大学机械工程学院,杭州310018 [3]浙江大学信息与电子工程学院,杭州310027

出　　处：《半导体光电》2023年第4期543-550,共8页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61704152,61473287)。

摘　　要：设计并制备了一种基于忆阻器结构且具有可编程特性的Ge基光控晶体管,它由两个结构为Ni/Ge/GeO_(x)/Al_(2)O_(3)∶HfO_(2)/Pd的忆阻器背对背组成,共用阻变层GeO_(x)/Al_(2)O_(3)∶HfO_(2)、衬底Ge和底电极Ni,阻变层的设计是实现光控晶体管功能的关键。两个顶电极Pd作为光控晶体管源漏极,中间区域作为栅极接受外加光源的栅控。探究了Ge基忆阻器光电响应特性,并实现光控晶体管基于光源栅控的输出与转移特性。进一步地,探究了器件的物理机制并验证设计的科学性和可行性。该光控晶体管具有非易失性与标准CMOS工艺兼容性等优势,能有效简化器件制备工艺、降低制造成本,可为下一代光电芯片研发提供参考。A Ge-based phototransistor with programmable characteristics based on the memristor structure was designed and prepared,which consisted of two back-to-back memristors structured with Ni/Ge/GeO_(x)/Al_(2)O_(3)∶HfO_(2)/Pd,sharing the same resistance switch layer GeO_(x)/Al_(2)O_(3)∶HfO_(2),substrate Ge and bottom electrode Ni.The design of the resistance switch layer was the key to realize the function of phototransistor.The two top electrodes Pd were used as the source-drain electrodes of the phototransistor,and the area between the two memristors was used as the gate of the phototransistor to receive regulation from external illuminant.The electrical and optical response characteristics of a single Ge-based memristor were explored.The output and transfer characteristics of the phototransistor based on gate-control from illuminant were realized.Furthermore,the scientificity and feasibility of this design was verified through exploring the device physics and mechanism.The phototransistor has advantages of non-volatility and compatibility with standard CMOS process,which can effectively simplify the process and reduce fabrication cost.This phototransistor can provide reference for the next-generation of optoelectronic chip to some extent.

关 键 词：锗 忆阻器 光控晶体管 光电特性 器件物理 氧空位缺陷态 能带结构 非平衡载流子 

分 类 号：TB34[一般工业技术—材料科学与工程] O472.80474[理学—半导体物理]