一种非易失可重置单栅场效应晶体管  

A Non-Volatile and Reconfigurable Single-Gate Field-Effect Transistor

作　　者：张瀚爽 刘溪[1] ZHANG Hanshuang;LIU Xi(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2023年第5期6-8,共3页Microprocessors

摘　　要：针对常规可重置型场效应晶体管(RFET)操作复杂、集成度低和反向泄漏电流较高等问题,提出了一种非易失可重置单栅场效应晶体管(NV-RFET)。新设计利用在漏电极和源电极之间施加电势差对可重置浮栅进行重置,对比现有技术,在断电情况下依然可以长时间记录保持器件的导电类型,无需额外供电的编程栅电极,实现了较低的静态功耗和反向漏电流。对器件的开关控制功能仅通过单个栅电极即可实现,由此简化单元结构的复杂度,易于单元结构互连和集成度的提升。Aiming at the problems of complex operation,low integration and high reverse leakage current of conventional reconfigurable field effect transistor(RFET),a non-volatile reconfigurable singlegate field effect transistor(NV-RFET)is proposed.The new design resets the reconfigurable floating gate by applying the potential difference between the drain electrode and the source electrode.Compared with the existing technology,the conduction type of the device can still be recorded and maintained for a long time in the case of power failure,dispense with additional power supply for the programming gateelectrode,which realizes lower static power consumption and reverse leakage current.The switch control function can be realized only through a single gate electrode,which simplifies the complexity of the unit structure and makes it easy to realize the unit structural interconnection and improve integration.

关 键 词：场效应管 可重置型晶体管 非易失性 可重置浮栅 

分 类 号：TN386[电子电信—物理电子学]