一种9~26 GHz宽带MMIC低噪声放大器的设计与实现  

Design and Implementation of a 9-26 GHz Broadband MMIC Low Noise Amplifier

作　　者：叶坤 张梦璐 蒋乐 豆兴昆 丁浩 YE Kun;ZHANG Menglu;JIANG Le;DOU Xingkun;DING Hao(China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China)

机构地区：[1]中科芯集成电路有限公司,江苏无锡214072

出　　处：《电子与封装》2023年第10期66-70,共5页Electronics & Packaging

摘　　要：基于0.15μm GaAs赝配高电子迁移率晶体管(pHEMT)工艺实现了一款工作频率覆盖9~26 GHz的宽带低噪声放大器。该放大器采用三级共源放大电路级联结构,前两级放大器采用电流复用来降低电路功耗,并提供一个较高的增益,并在后两级引入并联负反馈结构来扩展带宽、改善增益平坦度。测试结果表明,在9~26 GHz的宽频带范围内,芯片为单电源+5 V供电,静态电流为55 mA,噪声系数不大于2.5 dB,小信号增益大于18 dB并具有一定的正斜率,输出功率1 dB压缩点高于13 dBm,尺寸为1.75 mm×1.05 mm,具有宽频带、低噪声、低功耗、面积小等性能优势。Based on 0.15μm GaAs pseudomorphic high electron mobility transistor(pHEMT)technology,a broadband and low noise amplifier with operating frequency covering 9-26 GHz is implemented.The amplifier adopts a three-stage cascaded common-source amplifier circuit structure.The first two stages of the amplifier use current multiplexing to reduce circuit power consumption and provide a higher gain.The parallel negative feedback structure is introduced in the last two stages to extend the bandwidth and improve the gain flatness.The test results show that in the broadband range of 9-26 GHz,the chip is powered by single+5 V power supply,the quiescent current is 55 mA,the noise factor is no more than 2.5 dB,the small signal gain is more than 18 dB and has a certain positive slope,the output power 1 dB compression point is higher than 13 dBm,and the size is 1.75 mm×1.05 mm.It has the advantages of wide band,low noise,low power consumption and small area.

关 键 词：低噪声放大器 电流复用 宽带 负反馈 

分 类 号：TN722.3[电子电信—电路与系统]