InGaAs/InP SAGCM APD的电流响应模型研究  

Research on current response model of InGaAs/InP SAGCM APD

作　　者：谢生 张帆 毛陆虹[3] XIE Sheng;ZHANG Fan;MAO Luhong(School of Microelectronics,Tianjin University,Tianjin 300072,China;Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology,Tianjin 300072,China;School of Electrical and Information Engineering,Tianjin University,Tianjin 300072,China)

机构地区：[1]天津大学微电子学院,天津300072 [2]天津市成像与感知微电子技术重点实验室,天津300072 [3]天津大学自动化与信息工程学院,天津300072

出　　处：《华中科技大学学报（自然科学版）》2023年第9期160-166,共7页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金资助项目(11673019).

摘　　要：从吸收、渐变、电荷和倍增层分离型(SAGCM)InGaAs/InP APD的器件结构和工作原理出发,分析了载流子扩散、产生-复合等影响暗电流的主要因素,推导了光电流响应和碰撞电离倍增因子的表达式,同时考虑了温度和高偏压下隧穿效应的影响,构建了完整的电流响应模型.模型使用与通用电路仿真器完全兼容的Verilog-A语言进行描述,适用于Cadence电路设计平台中与外围电路进行协同仿真.结果表明:在300 K下模型仿真结果与实验数据在60 V偏置电压范围内均处于同一数量级,验证了所构建的APD器件模型的精确度,为光电探测系统的协同设计与整体优化提供了参考.The main factors affecting the dark current in the separate absorption,grading,charge and multiplication(SAGCM)layer InGaAs/InP avalanche photodiode(APD),such as carrier diffusion and generation-recombination were analyzed based on the device structure and operating principle,then the expressions of photocurrent response and multiplication factor of collision ionization were derived,and a complete equivalent circuit model for current response considering the influence of temperature and tunneling effect under high bias voltage as well was constructed.It was described in Verilog-A language which is fully compatible with the general circuit simulator,thus could be simulated with peripheral circuit on Cadence circuit design platform.It shows that the simulation results and experimental data are in the same order of magnitude in the 60 V bias voltage range at 300 K,demonstrating the accuracy of APD model.The current response model proposed provides a guideline for the co-design and overall optimization of photoelectric detection system.

关 键 词：雪崩光电二极管(APD) 半导体器件模型 INGAAS/INP 电流响应 倍增因子 碰撞电离 

分 类 号：TN32[电子电信—物理电子学]