多变量Si杂质诱导InGaAs/AlGaAs量子阱混杂研究  

InGaAs/AlGaAs quantum well intermixing induced by Si impurities under multi-variable conditions

作　　者：刘翠翠 林楠[2,3] 马骁宇 张月明[4] 刘素平 LIU Cui-cui;LIN Nan;MA Xiao-yu;ZHANG Yue-ming;LIU Su-ping(National Innovation Center of Radiation Application,China Institute of Atomic Energy,Beijing 102413,China;National Engineering Research Center for Optoelectronics Devices,Institute of Semiconductors,CAS,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101408,China;Hitachi High-tech Scientific Solutions(Beijing)Co.,Ltd.,Beijing 100012,China)

机构地区：[1]中国原子能科学研究院国家原子能机构抗辐照应用技术创新中心,北京102413 [2]中国科学院半导体研究所光电子器件国家工程中心,北京100083 [3]中国科学院大学材料科学与光电技术学院,北京101408 [4]日立科学仪器(北京)有限公司,北京100012

出　　处：《中国光学（中英文）》2023年第6期1512-1523,共12页Chinese Optics

基　　金：广东省重点领域研发计划项目(No.2020B090922003);中核集团"青年英才"科研项目(No.11FY212306000801)。

摘　　要：腔面光学灾变损伤是导致高功率量子阱半导体激光器阈值输出功率受限制的关键因素。通过量子阱混杂技术调整半导体激光器腔面局部区域处有源区材料的带隙宽度,形成对输出光透明的非吸收窗口,可提高激光器输出功率。本文基于InGaAs/AlGaAs高功率量子阱半导体激光器初级外延片,以外延Si单晶层作为扩散源,结合快速热退火方法开展了杂质诱导量子阱混杂研究。探索了介质层生长温度、介质层厚度、热处理温度、热处理时间等条件对混杂效果的影响。结果表明,50 nm的650℃低温外延Si介质层并结合875℃/90 s快速热退火处理可在保证光致发光谱的同时获得约57 nm的波长蓝移量。能谱测试发现,Si杂质扩散到初级外延片上的波导层是导致量子阱混杂效果显著的关键。Catastrophic Optical Mirror Damage(COMD)on the cavity surface is the key factor limiting the threshold output power of high-power quantum well semiconductor laser diodes.To improve the output power of the laser diode,the band gap width of the active material in the cavity surface of the semiconductor laser diode can be adjusted by the quantum well intermixing technology to form a non-absorbing window transparent to the output laser.Based on the primary epitaxial wafers of InGaAs/AlGaAs high power quantum well semiconductor laser diode,using the single crystal Si dielectric layer grown by Metal Oxide Chemical Vapor Deposition(MOCVD)as the diffusion source,the research on Si impurity induced quantum well intermixing was carried out by using the Rapid Thermal Annealing(RTA)process.The effects of growth characteristics of Si dielectric layer,the temperature and time of RTA on the intermixing process were investigated.The experimental results show that the epitaxial 50 nm Si dielectric layer at 650°C combined with 875°C/90 s RTA treatment can obtain about 57 nm wavelength blue shift while maintaining the photoluminescence spectrum shape and the primary epitaxial wafers.It is found that the diffusion of Si impurities into the waveguide layer on the primary epitaxial wafer is the key to the remarkable effect of quantum well intermixing by the energy spectrum measurement technique.

关 键 词：半导体激光器 量子阱混杂 快速热退火 波长蓝移 光致发光谱 

分 类 号：TN248.2[电子电信—物理电子学]