低损伤碲镉汞长波红外焦平面探测器电极接触孔刻蚀技术研究  

Study on Electrode Contact Hole Etching Technique of Long-Wave Infrared HgCdTe Focal Plane Detectors with Low Damage

作　　者：李景峰 刘世光 宁提[1] 刘铭[1] 王丹 LI Jing-feng;LIU Shi-guang;NING Ti;LIU Ming;WANG Dan(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2023年第11期6-12,共7页Infrared

摘　　要：长波碲镉汞材料受结构、组分等因素影响。在制备器件过程中,刻蚀电极接触孔易发生材料损伤,影响芯片的成像性能。利用现有电感耦合等离子体(InductivelyCoupledPlasma,ICP)设备刻蚀长波碲镉汞芯片电极接触孔,采用分步刻蚀以避免损伤。该方法虽可提高芯片的成像质量,但效率低,难以应用于大规模生产。为了提高刻蚀效率和实现器件大规模制备,通过对ICP刻蚀机上下电极射频功率的协同优化,开发出长波碲镉汞芯片电极接触孔一次成型工艺。经中测验证,探测器(长波320×256,像元中心间距为30μm)的盲元率仅为0.26%。该工艺能够实现低损伤电极孔刻蚀,可推广到大批量长波红外芯片制备。Long-wave mercury cadmium telluride materials are influenced by factors such as structure and composition.During the preparation of devices,material damage can occur to the etched electrode contact holes,which affects the imaging performance of the chip.The existing inductively coupled plasma(ICP)e-quipment is used to etch the electrode contact holes of long-wave mercury cadmium telluride chips,and step-by-step etching is used to avoid damage.Although this method can improve the imaging quality of chips,its efficiency is low and it is difficult to apply to large-scale fabrication.In order to improve etching efficiency and achieve large-scale device preparation,a one-step forming process is developed for the electrode contact holes of long-wave mercury cadmium telluride chips by co-optimizing the RF power of the upper and lower electrodes of the ICP etching machine.After verification by intermediate testing,the blind element rate of the long wave detector(320X256 pixels with a pixel pitch of 30μm)is only 0.26%.This process can achieve low damage e-lectrode hole etching and can be extended to the preparation of large-scale long-wave infrared chips.

关 键 词：长波 碲镉汞 损伤 刻蚀技术 

分 类 号：TN213[电子电信—物理电子学]