SiC功率LDMOS器件发展现状及新进展  

Development Status and New Progress of SiC Power LDMOS Devices

作　　者：杨帅强 刘英坤[1] Yang Shuaiqiang;Liu Yingkun(The 13^(th)Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第11期949-960,共12页Semiconductor Technology

摘　　要：集成化和小型化是未来电力电子技术的发展方向,SiC-横向扩散金属氧化物半导体(LDMOS)器件兼有SiC材料优势和LDMOS器件优势,击穿电压高、比导通电阻低、易与其他器件集成,在单片功率集成和小型化应用中起着重要的作用,但受限于晶圆材料和部分工艺加工技术而发展有限。综述了国内外SiC晶圆材料和SiC-LDMOS器件结构的发展现状,着重从衬底材料、晶体取向和器件结构优化方面阐述了SiC-LDMOS的研究进展,指出了SiC-LDMOS全面发展的瓶颈所在,展望了未来SiC-LDMOS的发展方向。Integration and miniaturization are the development directions of power electronics technology in the future.The SiC-laterally diffused metal oxide semiconductor(LDMOS)device has the advantages of both SiC materials and LDMOS devices.It has high breakdown voltage,low specific on resistance,and is easy to integrate with other devices.It plays an important role in monolithic power integration and miniaturization applications,but its development is limited by wafer materials and some processing technologies.The development status of SiC wafer materials and SiC-LDMOS device structures in domestic and abroad is reviewed,and the research progress of SiC-LDMOS is emphasized from the aspects of substrate material,crystal orientation and device structure optimization.The bottleneck of the overall development of SiC-LDMOS is pointed out,and the development direction of SiC-LDMOS in the future is prospected.

关 键 词：SiC-横向扩散金属氧化物半导体(LDMOS) 衬底 晶面 器件结构 击穿电压 比导通电阻 

分 类 号：TN321.3[电子电信—物理电子学] TN304.24