电子束光刻制备In-Ga-Zn-O场效应晶体管  

Fabrication of In-Ga-Zn-O Field Effect Transistor via Electron Beam Lithography

作　　者：杜晓松 王宇[1] 孔祥兔 Du Xiaosong;Wang Yu;Kong Xiangtu(School of Microelectronics and Control Engineering,Changzhou University,Changzhou 213164,China)

机构地区：[1]常州大学微电子与控制工程学院,江苏常州213164

出　　处：《半导体技术》2023年第11期991-994,1019,共5页Semiconductor Technology

基　　金：江苏省高层次创新创业人才引进计划(JSSCRC2021534);江苏省科技副总项目(FZ20221005);常州市领军型创新人才引进培育项目(CQ20210116);常州大学引进人才启动经费资助项目(ZMF20020444)。

摘　　要：无掩模直写技术制备半导体器件的方法在微电子学领域受到了广泛关注。提出了采用电子束直写技术对SnO_(2)薄膜进行图形化并辐照改性的方法,成功制备了以SnO_(2)为源/漏电极的底栅型铟镓锌氧化物(IGZO)场效应晶体管(FET)并对其进行了测试。测试结果表明,该IGZO FET展现了优良的电学性能:高源漏电流开关比(1.1×10^(6))、高电子迁移率(1.4 cm^(2)/(V·s))、较小的回滞差分电压(<2 V)、极低的栅极漏电流(<1 nA),这为无掩模版制备高性能氧化物半导体器件及柔性全透明集成电路提供了全新的方法。Maskless direct writing technique to fabricate semiconductor device has received extensive attention in microelectronics field.The patterning and radiation exposure modification method of SnO_(2) film via electron beam direct writing technique was proposed,and the bottom gate In-Ga-Zn-O(IGZO)field effect transistor(FET)with SnO_(2) S/D electrodes was prepared and tested.The test results show that the IGZO FET exhibits excellent electrical performances with a source-drain current on-off ratio of 1.1×10^(6),a high electron mobility of 1.4 cm^(2)/(V·s),a smaller hysteresis differential voltage less than 2 V,and an extremely low gate leakage current below 1 nA.This provides a new approach for maskless production of high-performance oxide semiconductor device and flexible transparent integrated circuits.

关 键 词：电子束光刻 无掩模版图形化 直写技术 氧化物半导体器件 In-Ga-Zn-O 

分 类 号：TN386[电子电信—物理电子学] TN305