一种W波段硅基多通道多功能芯片  

A W-Band Silicon-Based Multi-Channel Multi-Function Chip

作　　者：于双江[1] 赵峰 郑俊平 赵宇[3] 高艳红 谭超[3] Yu Shuangjiang;Zhao Feng;Zheng Junping;Zhao Yu;Gao Yanhong;Tan Chao(Beijing Institute of Space Mechanics&Electricity,Beijing 100094,China;The Second Military Representative Office of the Air Force Equipment Department in Beijing,Beijing 100074,China;The 13h Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]北京空间机电研究所,北京100094 [2]空装驻北京地区第二军事代表室,北京100074 [3]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2023年第11期1038-1044,共7页Semiconductor Technology

摘　　要：为实现W波段多通道收发芯片小型化,研究了多层硅片垂直堆叠实现的三维硅基异构集成技术。基于高精度刻蚀工艺制作掩埋芯片的槽体和腔体,利用金属化通孔和上、下金属层实现了集成波导传输结构和滤波结构,结合金属化通孔的紧密分布实现了电磁屏蔽侧墙,该工艺在实现小型化的同时保证了抗干扰能力。采用高深宽比的通孔刻蚀技术和金属化技术实现信号的垂直传输,通过金丝键合实现微波单片集成电路(MMIC)芯片和硅基传输结构的物理连接,使用低温晶圆键合技术实现了硅片垂直堆叠,最终经微组装技术实现了92~96 GHz多通道多功能芯片。经测试,接收通道噪声系数小于6.2 dB,接收增益约大于14 dB,发射通道饱和输出功率达到20 dBm,验证了该技术的可行性,为W波段小型化多功能芯片提供了良好的设计思路。To realize the miniaturization of W-band multi-channel transceiver chips,the three dimensional silicon-based heterogeneous integration technology realized by vertical stacking of multi-layer silicon wafers was studied.Based on high-precision etching technology,the groove and cavity of the buried chip were fabricated.The integrated waveguide transmission structure and filtering structure were achieved by using metallized through vias and upper and lower metal layers.Combined with the tight distribution of metallized through vias,the electromagnetic shielding side wall were achieved.This process achieves miniaturization while ensuring anti-interference ability.The vertical transmission of signals was achieved by using high aspect ratio through via etching technology and metallization technology.The physical connection between microwave mondithic integrated circuit(MMIC)chips and silicon based transmission structures was achieved through gold wire bonding.The vertical stacking of silicon wafers was achieved by using low-temperature wafer bonding technology.Finally,a 92-96 GHz multi-channel multi-functional chip is achieved through micro assembly technology and tested.It achieves a noise figure of the receiving channel of less than 6.2 dB,a receiving gain of more than about 14 dB,and a saturated output power of the transmitting channel of 20 dBm.The feasibility of this technology is verified,which provides a good design idea for the W-band miniaturized multi-functional chips.

关 键 词：W波段 小型化 三维集成 多通道收发 多功能芯片 

分 类 号：TN454[电子电信—微电子学与固体电子学]