基于BiCMOS抗辐照加固技术的工艺研究  

Study on the Process of BiCMOS Radiation Resistant Reinforcement Technology

作　　者：庄立强 卢宇 马霞 李应龙 杨静 雷亚平 ZHUANG Liqiang;LU Yu;MA Xia;LI Yinglong;YANG Jing;LEI Yaping(Tianshui Tianguang Semiconductor Co.,Ltd.,Gansu 741000,China)

机构地区：[1]天水天光半导体有限责任公司,甘肃741000

出　　处：《集成电路应用》2023年第10期38-40,共3页Application of IC

摘　　要：阐述BiCMOS抗辐照加固技术,包括材料选择、设计优化与布局、加固工艺流程,探讨低界面态栅氧化制备工艺和复合层钝化工艺等关键技术,对工艺参数优化和流程改进进行探索,对技术进行评估和测试。最终实现符合设计要求的抗辐照总剂量≥300Krad(Si)的产品。This paper describes BiCMOS radiation resistant reinforcement technology,including material selection,design optimization and layout,reinforcement process flow,exploring key technologies such as low interface state gate oxidation preparation process and composite layer passivation process,exploring process parameter optimization and process improvement,and evaluating and testing the technology.Finally,a product with a total radiation resistance dose of≥300Krad(Si)that meets the design requirements was achieved.

关 键 词：集成电路制造 BICMOS 辐照效应 抗辐照加固 

分 类 号：TN405[电子电信—微电子学与固体电子学]