适用于EEPROM的宽工作条件LDO设计  

Design of an LDO for EEPROM with Wide Working Condition

作　　者：周旺 李一男 陈风凉 沈鑫 王留所 ZHOU Wang;LI Yi′nan;CHEN Fengliang;SHEN Xin;WANG Liusuo(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子与封装》2023年第11期74-79,共6页Electronics & Packaging

摘　　要：设计了一种适用于EEPROM的LDO电路。该电路在电源电压为2.3~5.7 V、工作温度为-60~135℃时可获得稳定的1.8 V输出电压,为EEPROM单元读取操作提供所需栅电压。采用国内0.18μm商用工艺,版图尺寸为480μm×100μm。给出了Hspice仿真环境下的仿真结果。An LDO circuit for EEPROM is designed.This circuit can obtain a stable output voltage of 1.8 V when the power supply voltage is 2.3-5.7 V and the operating temperature is-60-135℃,providing the required gate voltage for EEPROM cell reading operation.This design adopts domestic 0.18μm commercial process,its layout size is 480μm×100μm.Simulation results under the Hspice simulation environment are provided.

关 键 词：EEPROM LDO 宽电源电压 高启动速度 低功耗 

分 类 号：TN402[电子电信—微电子学与固体电子学]