高温存储下键合界面演化行为及寿命研究  

Evolution behavior and lifetime of bonding interface under high temperature storage

作　　者：王潮洋 林鹏荣 戴晨毅 唐睿[2] 李金月 WANG Chaoyang;LIN Pengrong;DAI Chenyi;TANG Rui;LI Jinyue(Beijing Microelectronics Technology Institution,Beijing 100076,China;School of integrated Circuits,Peking University,Beijing 100871,China)

机构地区：[1]北京微电子技术研究所,北京100076 [2]北京大学集成电路学院,北京100871

出　　处：《电子元件与材料》2023年第10期1268-1275,共8页Electronic Components And Materials

摘　　要：功率VDMOS已经广泛应用于航天领域,但其在空间长期高温环境下存在键合可靠性下降甚至脱键失效的问题。为评估功率VDMOS高温条件下长期服役能力,需要对相应温度条件下键合强度演化规律、失效机理、寿命评估等方面展开研究。设计150,300℃两组高温存储试验,研究不同高温存储条件下键合强度演化规律及界面IMC演化行为,分析键合失效机理,对键合寿命进行预测。结果表明:键合强度随高温存储时间增加而下降,界面IMC由Au2 Al逐步转变为AuAl2;脱键断面裂纹源为键合点前部Al丝,裂纹沿相界面扩展;基于Arrhenius加速寿命模型得到键合点理论寿命计算公式,外推出常温(25℃)下键合点理论寿命约为3×10^(7)h。Power VDMOS has been widely used in aerospace.However,it has problems of decreasing bonding reliability and even debonding failure when it is subjected to high temperature for long period in space.To evaluate its service cycle,it is necessary to study the evolution of bonding strength,failure mechanism,and life assessment under corresponding temperature conditions.High-temperature storage tests were conducted at 150℃and 300℃to investigate the evolution of bonding strength and interface IMC behavior,to analyze bonding failure mechanism,and to predict its lifespan.The results show that the bonding strength decreases at higher temperature storage time,and the interface IMC gradually transforms from Au2 Al to AuAl2.The cause of crack in the debonding area is the Al wire near the bonding zone,and the crack propagates along the phase interface.Based on the Arrhenius accelerated life model,a formula was obtained for calculating the theoretical lifespan of bonding points.The extrapolated lifespan of the bonding points is about 3×10^(7)h at room temperature(25℃).

关 键 词：键合强度 Au-Al 键合界面 高温存储 寿命 

分 类 号：TN405.96[电子电信—微电子学与固体电子学]